Abstract
A new analytic cell-based approach to the modeling of the oxide breakdown statistics is presented. The new model has the same predictive power as the standard percolation approach and the advantage of providing simple analytic results. The scaling with oxide thickness of the Weibull slope and the mean critical density of defects at breakdown are accounted for correctly.
Original language | English |
---|---|
Pages (from-to) | 296-298 |
Journal | IEEE Electron Device Letters |
Volume | 22 |
Issue number | 6 |
DOIs | |
Publication status | Published - 1 Jun 2001 |
Keywords
- CMOS reliability
- Dielectric breakdown
- MOS devices
- Reliability modeling
- Ultrathin gate oxide