New physics-based analytic approach to the thin-oxide breakdown statistics

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    Abstract

    A new analytic cell-based approach to the modeling of the oxide breakdown statistics is presented. The new model has the same predictive power as the standard percolation approach and the advantage of providing simple analytic results. The scaling with oxide thickness of the Weibull slope and the mean critical density of defects at breakdown are accounted for correctly.
    Original languageEnglish
    Pages (from-to)296-298
    JournalIEEE Electron Device Letters
    Volume22
    Issue number6
    DOIs
    Publication statusPublished - 1 Jun 2001

    Keywords

    • CMOS reliability
    • Dielectric breakdown
    • MOS devices
    • Reliability modeling
    • Ultrathin gate oxide

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