New physics-based analytic approach to the thin-oxide breakdown statistics

Jordi Suñé

doi:10.1109/55.924847

New physics-based analytic approach to the thin-oxide breakdown statistics

Jordi Suñé

Research output: Contribution to journal › Article › Research › peer-review

231 Citations (Scopus)

Abstract

A new analytic cell-based approach to the modeling of the oxide breakdown statistics is presented. The new model has the same predictive power as the standard percolation approach and the advantage of providing simple analytic results. The scaling with oxide thickness of the Weibull slope and the mean critical density of defects at breakdown are accounted for correctly.

Original language	English
Pages (from-to)	296-298
Journal	IEEE Electron Device Letters
Volume	22
Issue number	6
DOIs	https://doi.org/10.1109/55.924847
Publication status	Published - 1 Jun 2001

Keywords

CMOS reliability
Dielectric breakdown
MOS devices
Reliability modeling
Ultrathin gate oxide

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abstract = "A new analytic cell-based approach to the modeling of the oxide breakdown statistics is presented. The new model has the same predictive power as the standard percolation approach and the advantage of providing simple analytic results. The scaling with oxide thickness of the Weibull slope and the mean critical density of defects at breakdown are accounted for correctly.",

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KW - MOS devices

KW - Reliability modeling

KW - Ultrathin gate oxide

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