New insights on the post-BD conduction of MOS devices at the nanoscale

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Abstract

We have combined standard electrical tests with conductive-atomic force microscopy experiments to investigate the conduction of MOS devices after the dielectric breakdown (BD) of the SiO2 gate oxide. In particular, the influence of the conduction nanometer scale parameters on the overall device post-BD current-voltage characteristics has been analyzed. The results show a nonuniform conductivity of the oxide at the BD area and that the total current flowing through the device is mainly driven by a very small fraction of that region. © 2005 IEEE.
Original languageEnglish
Pages (from-to)109-111
JournalIEEE Electron Device Letters
Volume26
DOIs
Publication statusPublished - 1 Feb 2005

Keywords

  • Atomic force microscopy
  • Dielectric breakdown
  • Gate dielectric
  • MOS devices
  • Semiconductor device reliability

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