New insights on the post-BD conduction of MOS devices at the nanoscale

Marc Porti; S. Meli; M. Nafría; X. Aymerich

doi:https://doi.org/10.1109/LED.2004.841190

New insights on the post-BD conduction of MOS devices at the nanoscale

Marc Porti, S. Meli, M. Nafría, X. Aymerich

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

1 Citation (Scopus)

Abstract

We have combined standard electrical tests with conductive-atomic force microscopy experiments to investigate the conduction of MOS devices after the dielectric breakdown (BD) of the SiO2 gate oxide. In particular, the influence of the conduction nanometer scale parameters on the overall device post-BD current-voltage characteristics has been analyzed. The results show a nonuniform conductivity of the oxide at the BD area and that the total current flowing through the device is mainly driven by a very small fraction of that region. © 2005 IEEE.

Original language	English
Pages (from-to)	109-111
Journal	IEEE Electron Device Letters
Volume	26
DOIs	https://doi.org/10.1109/LED.2004.841190
Publication status	Published - 1 Feb 2005

Keywords

Atomic force microscopy
Dielectric breakdown
Gate dielectric
MOS devices
Semiconductor device reliability

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Cite this

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title = "New insights on the post-BD conduction of MOS devices at the nanoscale",

abstract = "We have combined standard electrical tests with conductive-atomic force microscopy experiments to investigate the conduction of MOS devices after the dielectric breakdown (BD) of the SiO2 gate oxide. In particular, the influence of the conduction nanometer scale parameters on the overall device post-BD current-voltage characteristics has been analyzed. The results show a nonuniform conductivity of the oxide at the BD area and that the total current flowing through the device is mainly driven by a very small fraction of that region. {\textcopyright} 2005 IEEE.",

keywords = "Atomic force microscopy, Dielectric breakdown, Gate dielectric, MOS devices, Semiconductor device reliability",

author = "Marc Porti and S. Meli and M. Nafr{\'i}a and X. Aymerich",

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AU - Porti, Marc

AU - Meli, S.

AU - Nafría, M.

AU - Aymerich, X.

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Y1 - 2005/2/1

N2 - We have combined standard electrical tests with conductive-atomic force microscopy experiments to investigate the conduction of MOS devices after the dielectric breakdown (BD) of the SiO2 gate oxide. In particular, the influence of the conduction nanometer scale parameters on the overall device post-BD current-voltage characteristics has been analyzed. The results show a nonuniform conductivity of the oxide at the BD area and that the total current flowing through the device is mainly driven by a very small fraction of that region. © 2005 IEEE.

AB - We have combined standard electrical tests with conductive-atomic force microscopy experiments to investigate the conduction of MOS devices after the dielectric breakdown (BD) of the SiO2 gate oxide. In particular, the influence of the conduction nanometer scale parameters on the overall device post-BD current-voltage characteristics has been analyzed. The results show a nonuniform conductivity of the oxide at the BD area and that the total current flowing through the device is mainly driven by a very small fraction of that region. © 2005 IEEE.

KW - Atomic force microscopy

KW - Dielectric breakdown

KW - Gate dielectric

KW - MOS devices

KW - Semiconductor device reliability

U2 - https://doi.org/10.1109/LED.2004.841190

DO - https://doi.org/10.1109/LED.2004.841190

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VL - 26

SP - 109

EP - 111

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -

New insights on the post-BD conduction of MOS devices at the nanoscale

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Keywords

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