New insights in polarity-dependent oxide breakdown for ultrathin gate oxide

Ernest Wu, Jordi Suñé

    Research output: Contribution to journalArticleResearchpeer-review

    29 Citations (Scopus)

    Abstract

    In this work, a quantitative analysis is applied to resolve the newly reported polarity-dependent charge-to-breakdown (QBD) data from thick oxides of 6.8 nm down to ultrathin oxides of 1.9 nm. Three independent sets of QBD data, i.e., n+poly/NFET stressed under inversion and accumulation, and p+poly/PFET under accumulation are carefully investigated. The QBD degradation observed for p-type anodes, either poly-Si or Si-substrate, can be nicely understood with the framework of maximum energy released by injected electrons. Thus, this work provides a universal and quantitative account for a variety of experimental observations in the time-to-breakdown (TBD) and QBD polarity-dependence of oxide breakdown.
    Original languageEnglish
    Pages (from-to)494-496
    JournalIEEE Electron Device Letters
    Volume23
    DOIs
    Publication statusPublished - 1 Aug 2002

    Keywords

    • Gate dielectric
    • MOS devices
    • Oxide
    • Reliability
    • Semiconductor device reliability
    • TDDB measurements

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