New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM

M. Maestro; J. Diaz; A. Crespo-Yepes; M. B. Gonzalez; J. Martin-Martinez; R. Rodriguez; M. Nafria; F. Campabadal; X. Aymerich

doi:https://doi.org/10.1016/j.sse.2015.08.010

New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM

M. Maestro, J. Diaz, A. Crespo-Yepes, M. B. Gonzalez, J. Martin-Martinez, R. Rodriguez, M. Nafria, F. Campabadal, X. Aymerich

Research output: Contribution to journal › Article › Research › peer-review

13 Citations (Scopus)

Abstract

© 2015 Elsevier Ltd. Random Telegraph Noise (RTN) is one of the main reliability problems of resistive switching-based memories. To understand the physics behind RTN, a complete and accurate RTN characterization is required. The standard equipment used to analyse RTN has a typical time resolution of ∼2 ms which prevents evaluating fast phenomena. In this work, a new RTN measurement procedure, which increases the measurement time resolution to 2 μs, is proposed. The experimental set-up, together with the recently proposed Weighted Time Lag (W-LT) method for the analysis of RTN signals, allows obtaining a more detailed and precise information about the RTN phenomenon.

Original language	English
Pages (from-to)	140-145
Journal	Solid-State Electronics
Volume	115
DOIs	https://doi.org/10.1016/j.sse.2015.08.010
Publication status	Published - 1 Jan 2016

Keywords

RRAM
Random Telegraph Noise
Resistive switching
Resolution
Time constants

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https://ddd.uab.cat/record/163089

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title = "New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM",

abstract = "{\textcopyright} 2015 Elsevier Ltd. Random Telegraph Noise (RTN) is one of the main reliability problems of resistive switching-based memories. To understand the physics behind RTN, a complete and accurate RTN characterization is required. The standard equipment used to analyse RTN has a typical time resolution of ∼2 ms which prevents evaluating fast phenomena. In this work, a new RTN measurement procedure, which increases the measurement time resolution to 2 μs, is proposed. The experimental set-up, together with the recently proposed Weighted Time Lag (W-LT) method for the analysis of RTN signals, allows obtaining a more detailed and precise information about the RTN phenomenon.",

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T1 - New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM

AU - Maestro, M.

AU - Diaz, J.

AU - Crespo-Yepes, A.

AU - Gonzalez, M. B.

AU - Martin-Martinez, J.

AU - Rodriguez, R.

AU - Nafria, M.

AU - Campabadal, F.

AU - Aymerich, X.

PY - 2016/1/1

Y1 - 2016/1/1

N2 - © 2015 Elsevier Ltd. Random Telegraph Noise (RTN) is one of the main reliability problems of resistive switching-based memories. To understand the physics behind RTN, a complete and accurate RTN characterization is required. The standard equipment used to analyse RTN has a typical time resolution of ∼2 ms which prevents evaluating fast phenomena. In this work, a new RTN measurement procedure, which increases the measurement time resolution to 2 μs, is proposed. The experimental set-up, together with the recently proposed Weighted Time Lag (W-LT) method for the analysis of RTN signals, allows obtaining a more detailed and precise information about the RTN phenomenon.

AB - © 2015 Elsevier Ltd. Random Telegraph Noise (RTN) is one of the main reliability problems of resistive switching-based memories. To understand the physics behind RTN, a complete and accurate RTN characterization is required. The standard equipment used to analyse RTN has a typical time resolution of ∼2 ms which prevents evaluating fast phenomena. In this work, a new RTN measurement procedure, which increases the measurement time resolution to 2 μs, is proposed. The experimental set-up, together with the recently proposed Weighted Time Lag (W-LT) method for the analysis of RTN signals, allows obtaining a more detailed and precise information about the RTN phenomenon.

KW - RRAM

KW - Random Telegraph Noise

KW - Resistive switching

KW - Resolution

KW - Time constants

U2 - https://doi.org/10.1016/j.sse.2015.08.010

DO - https://doi.org/10.1016/j.sse.2015.08.010

M3 - Article

SN - 0038-1101

VL - 115

SP - 140

EP - 145

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM

Abstract

Keywords

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