New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM

M. Maestro, J. Diaz, A. Crespo-Yepes, M. B. Gonzalez, J. Martin-Martinez, R. Rodriguez, M. Nafria, F. Campabadal, X. Aymerich

Research output: Contribution to journalArticleResearchpeer-review

9 Citations (Scopus)

Abstract

© 2015 Elsevier Ltd. Random Telegraph Noise (RTN) is one of the main reliability problems of resistive switching-based memories. To understand the physics behind RTN, a complete and accurate RTN characterization is required. The standard equipment used to analyse RTN has a typical time resolution of ∼2 ms which prevents evaluating fast phenomena. In this work, a new RTN measurement procedure, which increases the measurement time resolution to 2 μs, is proposed. The experimental set-up, together with the recently proposed Weighted Time Lag (W-LT) method for the analysis of RTN signals, allows obtaining a more detailed and precise information about the RTN phenomenon.
Original languageEnglish
Pages (from-to)140-145
JournalSolid-State Electronics
Volume115
DOIs
Publication statusPublished - 1 Jan 2016

Keywords

  • RRAM
  • Random Telegraph Noise
  • Resistive switching
  • Resolution
  • Time constants

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