Neural network based analysis of random telegraph noise in resistive random access memories

G González-Cordero; M B González; Antoni Morell Pérez; F Jiménez-Molinos; F Campabadal; J B Roldán

doi:10.1088/1361-6641/ab6103

Neural network based analysis of random telegraph noise in resistive random access memories

G González-Cordero, M B González, Antoni Morell Pérez, F Jiménez-Molinos, F Campabadal, J B Roldán

Department of Telecommunications and Systems Engineering

Research output: Contribution to journal › Article › Research › peer-review

Original language	Undefined/Unknown
Journal	Semiconductor science and technology
DOIs	https://doi.org/10.1088/1361-6641/ab6103
Publication status	Published - 1 Feb 2020

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10.1088/1361-6641/ab6103

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title = "Neural network based analysis of random telegraph noise in resistive random access memories",

author = "G Gonz{\'a}lez-Cordero and Gonz{\'a}lez, {M B} and {Morell P{\'e}rez}, Antoni and F Jim{\'e}nez-Molinos and F Campabadal and Rold{\'a}n, {J B}",

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AU - González-Cordero, G

AU - González, M B

AU - Morell Pérez, Antoni

AU - Jiménez-Molinos, F

AU - Campabadal, F

AU - Roldán, J B

PY - 2020/2/1

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DO - 10.1088/1361-6641/ab6103

M3 - Artículo

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

ER -

Neural network based analysis of random telegraph noise in resistive random access memories

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