Negative capacitance in switching MISS devices

J. Millán, V. Villaronga, J. R. Morante, F. Serra-Mestres, A. Herms

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1 Citation (Scopus)

Abstract

The capacitance of the Al-SiO 2 (<60 A ̊)-Si(n)-Si(p + ) structure has been measured at different dc bias for several frequencies. The experimental capacitance decreases sharply as reverse dc bias is increased, passes through zero, and attains a negative value. A similar behaviour is observed at low frequencies when the structure is forward biased. This unusual behaviour is explaned considering the interaction of the carriers with the interface states at the I-S interface and the influence of the electric field on the tunnelling emission rate of these states. © 1985.
Original languageEnglish
Pages (from-to)351-355
JournalPhysica B+C
Volume129
Issue number1-3
DOIs
Publication statusPublished - 1 Jan 1985

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