The capacitance of the Al-SiO 2 (<60 A ̊)-Si(n)-Si(p + ) structure has been measured at different dc bias for several frequencies. The experimental capacitance decreases sharply as reverse dc bias is increased, passes through zero, and attains a negative value. A similar behaviour is observed at low frequencies when the structure is forward biased. This unusual behaviour is explaned considering the interaction of the carriers with the interface states at the I-S interface and the influence of the electric field on the tunnelling emission rate of these states. © 1985.
|Publication status||Published - 1 Jan 1985|