Abstract
The capacitance of the Al-SiO 2 (<60 A ̊)-Si(n)-Si(p + ) structure has been measured at different dc bias for several frequencies. The experimental capacitance decreases sharply as reverse dc bias is increased, passes through zero, and attains a negative value. A similar behaviour is observed at low frequencies when the structure is forward biased. This unusual behaviour is explaned considering the interaction of the carriers with the interface states at the I-S interface and the influence of the electric field on the tunnelling emission rate of these states. © 1985.
Original language | English |
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Pages (from-to) | 351-355 |
Journal | Physica B+C |
Volume | 129 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 1 Jan 1985 |