Negative capacitance in switching MISS devices

J. Millán; V. Villaronga; J. R. Morante; F. Serra-Mestres; A. Herms

doi:10.1016/0378-4363(85)90600-X

Negative capacitance in switching MISS devices

J. Millán, V. Villaronga, J. R. Morante, F. Serra-Mestres, A. Herms

Department of Physics

Research output: Contribution to journal › Article › Research › peer-review

1 Citation (Scopus)

Abstract

The capacitance of the Al-SiO 2 (<60 A ̊)-Si(n)-Si(p + ) structure has been measured at different dc bias for several frequencies. The experimental capacitance decreases sharply as reverse dc bias is increased, passes through zero, and attains a negative value. A similar behaviour is observed at low frequencies when the structure is forward biased. This unusual behaviour is explaned considering the interaction of the carriers with the interface states at the I-S interface and the influence of the electric field on the tunnelling emission rate of these states. © 1985.

Original language	English
Pages (from-to)	351-355
Journal	Physica B+C
Volume	129
Issue number	1-3
DOIs	https://doi.org/10.1016/0378-4363(85)90600-X
Publication status	Published - 1 Jan 1985

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@article{ce15c81cc7ce48e3805c0227c6df7386,

title = "Negative capacitance in switching MISS devices",

abstract = "The capacitance of the Al-SiO 2 (<60 A ̊)-Si(n)-Si(p + ) structure has been measured at different dc bias for several frequencies. The experimental capacitance decreases sharply as reverse dc bias is increased, passes through zero, and attains a negative value. A similar behaviour is observed at low frequencies when the structure is forward biased. This unusual behaviour is explaned considering the interaction of the carriers with the interface states at the I-S interface and the influence of the electric field on the tunnelling emission rate of these states. {\textcopyright} 1985.",

author = "J. Mill{\'a}n and V. Villaronga and Morante, {J. R.} and F. Serra-Mestres and A. Herms",

year = "1985",

month = jan,

day = "1",

doi = "10.1016/0378-4363(85)90600-X",

language = "English",

volume = "129",

pages = "351--355",

number = "1-3",

}

TY - JOUR

T1 - Negative capacitance in switching MISS devices

AU - Millán, J.

AU - Villaronga, V.

AU - Morante, J. R.

AU - Serra-Mestres, F.

AU - Herms, A.

PY - 1985/1/1

Y1 - 1985/1/1

N2 - The capacitance of the Al-SiO 2 (<60 A ̊)-Si(n)-Si(p + ) structure has been measured at different dc bias for several frequencies. The experimental capacitance decreases sharply as reverse dc bias is increased, passes through zero, and attains a negative value. A similar behaviour is observed at low frequencies when the structure is forward biased. This unusual behaviour is explaned considering the interaction of the carriers with the interface states at the I-S interface and the influence of the electric field on the tunnelling emission rate of these states. © 1985.

AB - The capacitance of the Al-SiO 2 (<60 A ̊)-Si(n)-Si(p + ) structure has been measured at different dc bias for several frequencies. The experimental capacitance decreases sharply as reverse dc bias is increased, passes through zero, and attains a negative value. A similar behaviour is observed at low frequencies when the structure is forward biased. This unusual behaviour is explaned considering the interaction of the carriers with the interface states at the I-S interface and the influence of the electric field on the tunnelling emission rate of these states. © 1985.

U2 - 10.1016/0378-4363(85)90600-X

DO - 10.1016/0378-4363(85)90600-X

M3 - Article

VL - 129

SP - 351

EP - 355

IS - 1-3

ER -