Negative Bias Temperature Instabilities induced in devices with millisecond anneal for ultra-shallow junctions

Engineering & Materials Science

• Negative bias temperature instability 100%
• High-k dielectric 54%
• Degradation 48%
• Relaxation time 45%
• Threshold voltage 38%
• Transistors 29%
• Lasers 26%
• Defects 23%
• Temperature 13%

Physics & Astronomy

• degradation 52%
• threshold voltage 33%
• implantation 31%
• transistors 27%
• relaxation time 27%
• shift 21%
• temperature 20%
• characterization 19%
• defects 19%
• lasers 15%

Chemistry

• Dielectric Material 61%
• Voltage 50%
• Time 25%