Negative Bias Temperature Instabilities induced in devices with millisecond anneal for ultra-shallow junctions

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Abstract

© 2014 Elsevier Ltd. In this paper the NBTI degradation has been studied in pMOS transistors with ultra-thin high-k dielectric subjected to a millisecond anneal for ultra-shallow junction implantation using different laser powers. An ultrafast characterization technique has been developed with the aim of acquiring the threshold voltage (Vth) shift in relaxation times as short as possible once the electrical stress is removed. It has been observed that increasing the millisecond anneal temperature reduce the NBTI degradation. These results have been explained in the context of the emission and capture probability maps of the defects.
Original languageEnglish
Pages (from-to)131-136
JournalSolid-State Electronics
Volume101
DOIs
Publication statusPublished - 1 Jan 2014

Keywords

  • Annealing
  • BTI
  • Defect passivation
  • Emission and capture times
  • MOSFET
  • Time-dependent variability

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