Nanotexturing to Enhance Photoluminescent Response of Atomically Thin Indium Selenide with Highly Tunable Band Gap

Mauro Brotons-Gisbert, Daniel Andres-Penares, Joonki Suh, Francisco Hidalgo, Rafael Abargues, Pedro J. Rodríguez-Cantó, Alfredo Segura, Ana Cros, Gerard Tobias, Enric Canadell, Pablo Ordejón, Junqiao Wu, Juan P. Martínez-Pastor, Juan F. Sánchez-Royo

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    129 Citations (Scopus)


    © 2016 American Chemical Society. Manipulating properties of matter at the nanoscale is the essence of nanotechnology, which has enabled the realization of quantum dots, nanotubes, metamaterials, and two-dimensional materials with tailored electronic and optical properties. Two-dimensional semiconductors have revealed promising perspectives in nanotechnology. However, the tunability of their physical properties is challenging for semiconductors studied until now. Here we show the ability of morphological manipulation strategies, such as nanotexturing or, at the limit, important surface roughness, to enhance light absorption and the luminescent response of atomically thin indium selenide nanosheets. Besides, quantum-size confinement effects make this two-dimensional semiconductor to exhibit one of the largest band gap tunability ranges observed in a two-dimensional semiconductor: from infrared, in bulk material, to visible wavelengths, at the single layer. These results are relevant for the design of new optoelectronic devices, including heterostructures of two-dimensional materials with optimized band gap functionalities and in-plane heterojunctions with minimal junction defect density.
    Original languageEnglish
    Pages (from-to)3221-3229
    JournalNano Letters
    Issue number5
    Publication statusPublished - 11 May 2016


    • Two-dimensional materials
    • band gap engineering
    • indium selenide
    • microphotoluminescence
    • nanotexturing
    • optical properties


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