Nanostructured MnGa films on Si/SiO<inf>2</inf> with 20.5 kOe room temperature coercivity

C. L. Zha, R. K. Dumas, J. W. Lau, S. M. Mohseni, Sohrab R. Sani, I. V. Golosovsky, Á F. Monsen, J. Nogués, Johan Åkerman

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Abstract

Nanostructured Mn67Ga33 films exhibiting high room temperature coercivity (HC 20.5 kOe) have been prepared by sputtering onto thermally oxidized Si substrates. Both the morphology and the coercivity of the films can be tuned by varying the growth parameters. The low deposition rate film, sputtered at a reduced power and working pressure, demonstrates a discontinuous island-like growth and the highest HC. The large H C is linked to the presence of the high anisotropy DO22 Mn3Ga phase and the single domain character of the exchange isolated, dipolar interacting, single crystal islands. © 2011 American Institute of Physics.
Original languageEnglish
Article number093902
JournalJournal of Applied Physics
Volume110
Issue number9
DOIs
Publication statusPublished - 1 Nov 2011

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    Zha, C. L., Dumas, R. K., Lau, J. W., Mohseni, S. M., Sani, S. R., Golosovsky, I. V., Monsen, Á. F., Nogués, J., & Åkerman, J. (2011). Nanostructured MnGa films on Si/SiO<inf>2</inf> with 20.5 kOe room temperature coercivity. Journal of Applied Physics, 110(9), [093902]. https://doi.org/10.1063/1.3656457