Nanostructured MnGa films on Si/SiO<inf>2</inf> with 20.5 kOe room temperature coercivity

C. L. Zha; R. K. Dumas; J. W. Lau; S. M. Mohseni; Sohrab R. Sani; I. V. Golosovsky; Á F. Monsen; J. Nogués; Johan Åkerman

doi:https://doi.org/10.1063/1.3656457

Nanostructured MnGa films on Si/SiO<inf>2</inf> with 20.5 kOe room temperature coercivity

C. L. Zha, R. K. Dumas, J. W. Lau, S. M. Mohseni, Sohrab R. Sani, I. V. Golosovsky, Á F. Monsen, J. Nogués, Johan Åkerman

Department of Physics

Research output: Contribution to journal › Article › Research › peer-review

41 Citations (Scopus)

Abstract

Nanostructured Mn67Ga33 films exhibiting high room temperature coercivity (HC 20.5 kOe) have been prepared by sputtering onto thermally oxidized Si substrates. Both the morphology and the coercivity of the films can be tuned by varying the growth parameters. The low deposition rate film, sputtered at a reduced power and working pressure, demonstrates a discontinuous island-like growth and the highest HC. The large H C is linked to the presence of the high anisotropy DO22 Mn3Ga phase and the single domain character of the exchange isolated, dipolar interacting, single crystal islands. © 2011 American Institute of Physics.

Original language	English
Article number	093902
Journal	Journal of applied physics
Volume	110
Issue number	9
DOIs	https://doi.org/10.1063/1.3656457
Publication status	Published - 1 Nov 2011

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title = "Nanostructured MnGa films on Si/SiO2 with 20.5 kOe room temperature coercivity",

abstract = "Nanostructured Mn67Ga33 films exhibiting high room temperature coercivity (HC 20.5 kOe) have been prepared by sputtering onto thermally oxidized Si substrates. Both the morphology and the coercivity of the films can be tuned by varying the growth parameters. The low deposition rate film, sputtered at a reduced power and working pressure, demonstrates a discontinuous island-like growth and the highest HC. The large H C is linked to the presence of the high anisotropy DO22 Mn3Ga phase and the single domain character of the exchange isolated, dipolar interacting, single crystal islands. {\textcopyright} 2011 American Institute of Physics.",

author = "Zha, {C. L.} and Dumas, {R. K.} and Lau, {J. W.} and Mohseni, {S. M.} and Sani, {Sohrab R.} and Golosovsky, {I. V.} and Monsen, {{\'A} F.} and J. Nogu{\'e}s and Johan {\AA}kerman",

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doi = "https://doi.org/10.1063/1.3656457",

language = "English",

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TY - JOUR

T1 - Nanostructured MnGa films on Si/SiO2 with 20.5 kOe room temperature coercivity

AU - Zha, C. L.

AU - Dumas, R. K.

AU - Lau, J. W.

AU - Mohseni, S. M.

AU - Sani, Sohrab R.

AU - Golosovsky, I. V.

AU - Monsen, Á F.

AU - Nogués, J.

AU - Åkerman, Johan

PY - 2011/11/1

Y1 - 2011/11/1

N2 - Nanostructured Mn67Ga33 films exhibiting high room temperature coercivity (HC 20.5 kOe) have been prepared by sputtering onto thermally oxidized Si substrates. Both the morphology and the coercivity of the films can be tuned by varying the growth parameters. The low deposition rate film, sputtered at a reduced power and working pressure, demonstrates a discontinuous island-like growth and the highest HC. The large H C is linked to the presence of the high anisotropy DO22 Mn3Ga phase and the single domain character of the exchange isolated, dipolar interacting, single crystal islands. © 2011 American Institute of Physics.

AB - Nanostructured Mn67Ga33 films exhibiting high room temperature coercivity (HC 20.5 kOe) have been prepared by sputtering onto thermally oxidized Si substrates. Both the morphology and the coercivity of the films can be tuned by varying the growth parameters. The low deposition rate film, sputtered at a reduced power and working pressure, demonstrates a discontinuous island-like growth and the highest HC. The large H C is linked to the presence of the high anisotropy DO22 Mn3Ga phase and the single domain character of the exchange isolated, dipolar interacting, single crystal islands. © 2011 American Institute of Physics.

U2 - https://doi.org/10.1063/1.3656457

DO - https://doi.org/10.1063/1.3656457

M3 - Article

SN - 0021-8979

VL - 110

JO - Journal of applied physics

JF - Journal of applied physics

IS - 9

M1 - 093902

ER -

Nanostructured MnGa films on Si/SiO<inf>2</inf> with 20.5 kOe room temperature coercivity

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