Nanoscale topography-current CAFM temperature study of Threading Dislocations in InGaAs channel materials

C. Couso, V. Iglesias, M. Porti, S. Claramunt, M. Nafría, N. Domingo, G. Bersuker, A. Cordes

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Cite this

@article{377ae259a0a64f349fb38ebd4cc65aa3,

title = "Nanoscale topography-current CAFM temperature study of Threading Dislocations in InGaAs channel materials",

author = "C. Couso and V. Iglesias and M. Porti and S. Claramunt and M. Nafr{\'i}a and N. Domingo and G. Bersuker and A. Cordes",

year = "2015",

month = jan,

day = "1",

language = "English",

pages = "--",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Nanoscale topography-current CAFM temperature study of Threading Dislocations in InGaAs channel materials

AU - Couso, C.

AU - Iglesias, V.

AU - Porti, M.

AU - Claramunt, S.

AU - Nafría, M.

AU - Domingo, N.

AU - Bersuker, G.

AU - Cordes, A.

PY - 2015/1/1

Y1 - 2015/1/1

M3 - Article

SP - -

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -