Nanoscale post-breakdown conduction of HfO<inf>2</inf>/SiO<inf>2</inf> MOS gate stacks studied by enhanced-CAFM

X. Blasco, Montse Nafría, X. Aymerich, J. Pétry, W. Vandervorst

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10 Citations (Scopus)

Abstract

An enhanced conductive atomic force microscope has enabled a measurement of the conduction through a HfO2/SiO2 gate stack until breakdown (BD) in a single measurement, with nanometer resolution. Before the stack BD, the current-voltage characteristic shows several conduction modes. After BD, switchings between different conduction states were observed, showing that BD is a reversible phenomenon. © 2005 IEEE.
Original languageEnglish
Pages (from-to)2817-2819
JournalIEEE Transactions on Electron Devices
Volume52
DOIs
Publication statusPublished - 1 Dec 2005

Keywords

  • Conductive atomic force microscopy (CAFM)
  • Dielectric breakdown
  • Gate dielectric
  • HfO 2
  • High-κ
  • Reliability
  • SiO 2

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