An enhanced conductive atomic force microscope has enabled a measurement of the conduction through a HfO2/SiO2 gate stack until breakdown (BD) in a single measurement, with nanometer resolution. Before the stack BD, the current-voltage characteristic shows several conduction modes. After BD, switchings between different conduction states were observed, showing that BD is a reversible phenomenon. © 2005 IEEE.
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 1 Dec 2005|
- Conductive atomic force microscopy (CAFM)
- Dielectric breakdown
- Gate dielectric
- HfO 2
- SiO 2