Nanoscale post-breakdown conduction of HfO<inf>2</inf>/SiO<inf>2</inf> MOS gate stacks studied by enhanced-CAFM

X. Blasco; Montse Nafría; X. Aymerich; J. Pétry; W. Vandervorst

doi:https://doi.org/10.1109/TED.2005.859705

Nanoscale post-breakdown conduction of HfO<inf>2</inf>/SiO<inf>2</inf> MOS gate stacks studied by enhanced-CAFM

X. Blasco, Montse Nafría, X. Aymerich, J. Pétry, W. Vandervorst

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

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Abstract

An enhanced conductive atomic force microscope has enabled a measurement of the conduction through a HfO2/SiO2 gate stack until breakdown (BD) in a single measurement, with nanometer resolution. Before the stack BD, the current-voltage characteristic shows several conduction modes. After BD, switchings between different conduction states were observed, showing that BD is a reversible phenomenon. © 2005 IEEE.

Original language	English
Pages (from-to)	2817-2819
Journal	IEEE Transactions on Electron Devices
Volume	52
DOIs	https://doi.org/10.1109/TED.2005.859705
Publication status	Published - 1 Dec 2005

Keywords

Conductive atomic force microscopy (CAFM)
Dielectric breakdown
Gate dielectric
HfO 2
High-κ
Reliability
SiO 2

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Cite this

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title = "Nanoscale post-breakdown conduction of HfO2/SiO2 MOS gate stacks studied by enhanced-CAFM",

abstract = "An enhanced conductive atomic force microscope has enabled a measurement of the conduction through a HfO2/SiO2 gate stack until breakdown (BD) in a single measurement, with nanometer resolution. Before the stack BD, the current-voltage characteristic shows several conduction modes. After BD, switchings between different conduction states were observed, showing that BD is a reversible phenomenon. {\textcopyright} 2005 IEEE.",

keywords = "Conductive atomic force microscopy (CAFM), Dielectric breakdown, Gate dielectric, HfO 2, High-κ, Reliability, SiO 2",

author = "X. Blasco and Montse Nafr{\'i}a and X. Aymerich and J. P{\'e}try and W. Vandervorst",

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AU - Blasco, X.

AU - Nafría, Montse

AU - Aymerich, X.

AU - Pétry, J.

AU - Vandervorst, W.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - An enhanced conductive atomic force microscope has enabled a measurement of the conduction through a HfO2/SiO2 gate stack until breakdown (BD) in a single measurement, with nanometer resolution. Before the stack BD, the current-voltage characteristic shows several conduction modes. After BD, switchings between different conduction states were observed, showing that BD is a reversible phenomenon. © 2005 IEEE.

AB - An enhanced conductive atomic force microscope has enabled a measurement of the conduction through a HfO2/SiO2 gate stack until breakdown (BD) in a single measurement, with nanometer resolution. Before the stack BD, the current-voltage characteristic shows several conduction modes. After BD, switchings between different conduction states were observed, showing that BD is a reversible phenomenon. © 2005 IEEE.

KW - Conductive atomic force microscopy (CAFM)

KW - Dielectric breakdown

KW - Gate dielectric

KW - HfO 2

KW - High-κ

KW - Reliability

KW - SiO 2

U2 - https://doi.org/10.1109/TED.2005.859705

DO - https://doi.org/10.1109/TED.2005.859705

M3 - Article

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SP - 2817

EP - 2819

ER -

Nanoscale post-breakdown conduction of HfO<inf>2</inf>/SiO<inf>2</inf> MOS gate stacks studied by enhanced-CAFM

Abstract

Keywords

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