Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO <inf>2</inf>/Pt structures

V. Iglesias; M. Lanza; A. Bayerl; M. Porti; M. Nafría; X. Aymerich; L. F. Liu; J. F. Kang; G. Bersuker; K. Zhang; Z. Y. Shen

doi:https://doi.org/10.1016/j.microrel.2012.06.073

Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO <inf>2</inf>/Pt structures

V. Iglesias, M. Lanza, A. Bayerl, M. Porti, M. Nafría, X. Aymerich, L. F. Liu, J. F. Kang, G. Bersuker, K. Zhang, Z. Y. Shen

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

13 Citations (Scopus)

Abstract

Resistive Switching (RS) phenomenon in Metal-Insulator-Metal (MIM) structures with polycrystalline HfO 2 layers as dielectric has been studied at the nanoscale using Conductive Atomic Force Microscope (CAFM). The CAFM measurements reveal that (i) the conductive filaments (CFs) created at very small areas are the origin of the RS phenomenon observed at device level and (ii) RS conductive filaments are primarily formed at the grain boundaries, which exhibit especially low breakdown voltage. CAFM images obtained on MIM structures at the Low and High Resistive states also show that, although the current in the Low Resistive State is mainly driven by a completely formed single CF, the cell area dependence of the conductivity in the High Resistive State could be explained by considering the presence of multiple partially formed CFs. © 2012 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	2110-2114
Journal	Microelectronics Reliability
Volume	52
DOIs	https://doi.org/10.1016/j.microrel.2012.06.073
Publication status	Published - 1 Sept 2012

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title = "Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO 2/Pt structures",

abstract = "Resistive Switching (RS) phenomenon in Metal-Insulator-Metal (MIM) structures with polycrystalline HfO 2 layers as dielectric has been studied at the nanoscale using Conductive Atomic Force Microscope (CAFM). The CAFM measurements reveal that (i) the conductive filaments (CFs) created at very small areas are the origin of the RS phenomenon observed at device level and (ii) RS conductive filaments are primarily formed at the grain boundaries, which exhibit especially low breakdown voltage. CAFM images obtained on MIM structures at the Low and High Resistive states also show that, although the current in the Low Resistive State is mainly driven by a completely formed single CF, the cell area dependence of the conductivity in the High Resistive State could be explained by considering the presence of multiple partially formed CFs. {\textcopyright} 2012 Elsevier Ltd. All rights reserved.",

author = "V. Iglesias and M. Lanza and A. Bayerl and M. Porti and M. Nafr{\'i}a and X. Aymerich and Liu, {L. F.} and Kang, {J. F.} and G. Bersuker and K. Zhang and Shen, {Z. Y.}",

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doi = "https://doi.org/10.1016/j.microrel.2012.06.073",

language = "English",

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TY - JOUR

T1 - Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO 2/Pt structures

AU - Iglesias, V.

AU - Lanza, M.

AU - Bayerl, A.

AU - Porti, M.

AU - Nafría, M.

AU - Aymerich, X.

AU - Liu, L. F.

AU - Kang, J. F.

AU - Bersuker, G.

AU - Zhang, K.

AU - Shen, Z. Y.

PY - 2012/9/1

Y1 - 2012/9/1

N2 - Resistive Switching (RS) phenomenon in Metal-Insulator-Metal (MIM) structures with polycrystalline HfO 2 layers as dielectric has been studied at the nanoscale using Conductive Atomic Force Microscope (CAFM). The CAFM measurements reveal that (i) the conductive filaments (CFs) created at very small areas are the origin of the RS phenomenon observed at device level and (ii) RS conductive filaments are primarily formed at the grain boundaries, which exhibit especially low breakdown voltage. CAFM images obtained on MIM structures at the Low and High Resistive states also show that, although the current in the Low Resistive State is mainly driven by a completely formed single CF, the cell area dependence of the conductivity in the High Resistive State could be explained by considering the presence of multiple partially formed CFs. © 2012 Elsevier Ltd. All rights reserved.

AB - Resistive Switching (RS) phenomenon in Metal-Insulator-Metal (MIM) structures with polycrystalline HfO 2 layers as dielectric has been studied at the nanoscale using Conductive Atomic Force Microscope (CAFM). The CAFM measurements reveal that (i) the conductive filaments (CFs) created at very small areas are the origin of the RS phenomenon observed at device level and (ii) RS conductive filaments are primarily formed at the grain boundaries, which exhibit especially low breakdown voltage. CAFM images obtained on MIM structures at the Low and High Resistive states also show that, although the current in the Low Resistive State is mainly driven by a completely formed single CF, the cell area dependence of the conductivity in the High Resistive State could be explained by considering the presence of multiple partially formed CFs. © 2012 Elsevier Ltd. All rights reserved.

U2 - https://doi.org/10.1016/j.microrel.2012.06.073

DO - https://doi.org/10.1016/j.microrel.2012.06.073

M3 - Article

SN - 0026-2714

VL - 52

SP - 2110

EP - 2114

JO - Microelectronics Reliability

JF - Microelectronics Reliability

ER -

Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO <inf>2</inf>/Pt structures

Abstract

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