Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors

Fontsere, A. Perez-Tomas, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, M. R. Jennings, P. M. Gammon, C. A. Fisher, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, M. Nafria

Research output: Contribution to journalArticleResearch

14 Citations (Scopus)
Original languageEnglish
Pages (from-to)3952044-
JournalNanotechnology
Volume23
Issue number39
DOIs
Publication statusPublished - 1 Jan 2012

Cite this

Fontsere, Perez-Tomas, A., Placidi, M., Llobet, J., Baron, N., Chenot, S., Cordier, Y., Moreno, J. C., Jennings, M. R., Gammon, P. M., Fisher, C. A., Iglesias, V., Porti, M., Bayerl, A., Lanza, M., & Nafria, M. (2012). Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors. Nanotechnology, 23(39), 3952044-. https://doi.org/10.1088/0957-4484/23/39/395204