Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors

null Fontsere; A. Perez-Tomas; M. Placidi; J. Llobet; N. Baron; S. Chenot; Y. Cordier; J. C. Moreno; M. R. Jennings; P. M. Gammon; C. A. Fisher; V. Iglesias; M. Porti; A. Bayerl; M. Lanza; M. Nafria

doi:10.1088/0957-4484/23/39/395204

Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors

Fontsere, A. Perez-Tomas, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, M. R. Jennings, P. M. Gammon, C. A. Fisher, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, M. Nafria

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

14 Citations (Scopus)

Original language	English
Pages (from-to)	3952044-
Journal	Nanotechnology
Volume	23
Issue number	39
DOIs	https://doi.org/10.1088/0957-4484/23/39/395204
Publication status	Published - 1 Jan 2012

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10.1088/0957-4484/23/39/395204

Cite this

Fontsere, Perez-Tomas, A., Placidi, M., Llobet, J., Baron, N., Chenot, S., Cordier, Y., Moreno, J. C., Jennings, M. R., Gammon, P. M., Fisher, C. A., Iglesias, V., Porti, M., Bayerl, A., Lanza, M., & Nafria, M. (2012). Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors. Nanotechnology, 23(39), 3952044-. https://doi.org/10.1088/0957-4484/23/39/395204

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AU - Llobet, J.

AU - Baron, N.

AU - Chenot, S.

AU - Cordier, Y.

AU - Moreno, J. C.

AU - Jennings, M. R.

AU - Gammon, P. M.

AU - Fisher, C. A.

AU - Iglesias, V.

AU - Porti, M.

AU - Bayerl, A.

AU - Lanza, M.

AU - Nafria, M.

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