The nanometer-scale oxidation of Si(100) surfaces in air is performed with an atomic force microscope working in tapping mode. Applying a positive voltage to the sample with respect to the tip, two kinds of modifications are induced on the sample: grown silicon oxide mounds less than 5 nm high and mounds higher than 10 nm (which are assumed to be gold depositions). The threshold voltage necessary to produce the modification is studied as a function of the average tip-to-sample distance. © 1995 American Institute of Physics.
|Journal||Journal of Applied Physics|
|Publication status||Published - 1 Dec 1995|