Nanometer-scale oxidation of Si(100) surfaces by tapping mode atomic force microscopy

F. Pérez-Murano, G. Abadal, N. Barniol, X. Aymerich, J. Servat, P. Gorostiza, F. Sanz

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Abstract

The nanometer-scale oxidation of Si(100) surfaces in air is performed with an atomic force microscope working in tapping mode. Applying a positive voltage to the sample with respect to the tip, two kinds of modifications are induced on the sample: grown silicon oxide mounds less than 5 nm high and mounds higher than 10 nm (which are assumed to be gold depositions). The threshold voltage necessary to produce the modification is studied as a function of the average tip-to-sample distance. © 1995 American Institute of Physics.
Original languageEnglish
Pages (from-to)6797-6801
JournalJournal of Applied Physics
Volume78
DOIs
Publication statusPublished - 1 Dec 1995

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