Nanometer scale lithography of silicon(100) surfaces using tapping mode atomic force microscopy

J. Servat, P. Gorostiza, F. Sanz, F. Pérez-Murano, N. Barniol, G. Abadal, X. Aymerich

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    Abstract

    Si(100) surfaces have been successfully oxidized at nanometer scale using an atomic force microscope working in tapping mode (TMAFM). To modify the surface, gold coated tips and chromium-gold coated tips have been used in order to apply a positive voltage to the sample against the grounded tip. A silicon oxide line of ∼10 nm lateral dimensions can be routinely grown on Si(100) surfaces by TMAFM, at a tip velocity as high as 0.1 mm/s. Pattern dimensions have been measured for different tip velocities and applied voltages and a tip velocity of up to 10 mm/s has been predicted. The patterns have been successfully used as a lithographic mask for a wet chemical etching. © 1996 American Vacuum Society.
    Original languageEnglish
    Pages (from-to)1208-1212
    JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    Volume14
    Issue number3
    DOIs
    Publication statusPublished - 1 Jan 1996

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