A conductive atomic force microscope has been used to electrically stress and to investigate the effects of degradation in the conduction properties of ultrathin (<6 nm) SiO2 films on a nanometer scale (areas of ≈ 100 nm2). Before oxide breakdown, switching between two states of well-defined conductivity and sudden changes of conductivity were observed, which are attributed to the capture/ release of single charges in the defects generated during stress. © 2001 American Institute of Physics.
|Journal||Applied Physics Letters|
|Publication status||Published - 25 Jun 2001|