Nanometer-scale electrical characterization of stressed ultrathin SiO<inf>2</inf> films using conducting atomic force microscopy

M. Porti, M. Nafría, X. Aymerich, A. Olbrich, B. Ebersberger

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    Abstract

    A conductive atomic force microscope has been used to electrically stress and to investigate the effects of degradation in the conduction properties of ultrathin (<6 nm) SiO2 films on a nanometer scale (areas of ≈ 100 nm2). Before oxide breakdown, switching between two states of well-defined conductivity and sudden changes of conductivity were observed, which are attributed to the capture/ release of single charges in the defects generated during stress. © 2001 American Institute of Physics.
    Original languageEnglish
    Pages (from-to)4181-4183
    JournalApplied Physics Letters
    Volume78
    DOIs
    Publication statusPublished - 25 Jun 2001

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