TY - JOUR
T1 - Nanomechanical switches based on metal-insulator-metal capacitors from a standard complementary-metal-oxide semiconductor technology
AU - Muñoz-Gamarra, J. L.
AU - Uranga, A.
AU - Barniol, N.
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2014/6/16
Y1 - 2014/6/16
N2 - We report experimental demonstrations of contact-mode nano- electromechanical switches obtained using a capacitor module based on metal-insulator-metal configuration of a standard commercial complementary metal oxide semiconductor technology. The developed 2 terminals Titanium Nitride switches operate at low voltages (∼10 V) thanks to its small gap (27 nm), showing an excellent ION/IOFF ratio (104) and abrupt behavior (5 mV/decade, one decade of current change is achieved with a 5 mV voltage variation). A switch configuration is also presented where using two electrodes three different contact mode states can be obtained, adding functionalities to mechanical switches configurations.
AB - We report experimental demonstrations of contact-mode nano- electromechanical switches obtained using a capacitor module based on metal-insulator-metal configuration of a standard commercial complementary metal oxide semiconductor technology. The developed 2 terminals Titanium Nitride switches operate at low voltages (∼10 V) thanks to its small gap (27 nm), showing an excellent ION/IOFF ratio (104) and abrupt behavior (5 mV/decade, one decade of current change is achieved with a 5 mV voltage variation). A switch configuration is also presented where using two electrodes three different contact mode states can be obtained, adding functionalities to mechanical switches configurations.
UR - http://www.scopus.com/inward/record.url?scp=84903197327&partnerID=8YFLogxK
U2 - https://doi.org/10.1063/1.4882918
DO - https://doi.org/10.1063/1.4882918
M3 - Article
SN - 0003-6951
VL - 104
JO - Applied physics letters
JF - Applied physics letters
IS - 24
M1 - 243105
ER -