Nanofabrication of electronic devices by field induced oxidation: Advantages of using Tapping Mode AFM.: 3rd International Workshop on Quantum Functional Devices(QFD'97). NIST/FED

F Pérez; G Abadal; N Barniol; X Aymerich; R García; Research and development association for future electron devices

Nanofabrication of electronic devices by field induced oxidation: Advantages of using Tapping Mode AFM. 3rd International Workshop on Quantum Functional Devices(QFD'97). NIST/FED

F Pérez, G Abadal, N Barniol, X Aymerich, R García, Research and development association for future electron devices (Editor)

Research output: Book/Report › Proceeding › Research

Original language	Undefined/Unknown
Place of Publication	- (US)
Number of pages	4
Publication status	Published - Jul 1997

Cite this

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title = "Nanofabrication of electronic devices by field induced oxidation: Advantages of using Tapping Mode AFM.: 3rd International Workshop on Quantum Functional Devices(QFD'97). NIST/FED",

author = "F P{\'e}rez and G Abadal and N Barniol and X Aymerich and R Garc{\'i}a",

editor = "devices, {Research and development association for future electron}",

year = "1997",

month = jul,

language = "Indefinido/desconocido",

}

TY - BOOK

T1 - Nanofabrication of electronic devices by field induced oxidation: Advantages of using Tapping Mode AFM.

T2 - 3rd International Workshop on Quantum Functional Devices(QFD'97). NIST/FED

AU - Pérez, F

AU - Abadal, G

AU - Barniol, N

AU - Aymerich, X

AU - García, R

A2 - devices, Research and development association for future electron

PY - 1997/7

Y1 - 1997/7

M3 - Libro de Actas

BT - Nanofabrication of electronic devices by field induced oxidation: Advantages of using Tapping Mode AFM.

CY - - (US)

ER -