Multivariate analysis and extraction of parameters in resistive RAMs using the Quantum Point Contact model

J. B. Roldán, E. Miranda, G. González-Cordero, P. García-Fernández, R. Romero-Zaliz, P. González-Rodelas, A. M. Aguilera, M. B. González, F. Jiménez-Molinos

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10 Citations (Scopus)

Abstract

© 2018 Author(s). A multivariate analysis of the parameters that characterize the reset process in Resistive Random Access Memory (RRAM) has been performed. The different correlations obtained can help to shed light on the current components that contribute in the Low Resistance State (LRS) of the technology considered. In addition, a screening method for the Quantum Point Contact (QPC) current component is presented. For this purpose, the second derivative of the current has been obtained using a novel numerical method which allows determining the QPC model parameters. Once the procedure is completed, a whole Resistive Switching (RS) series of thousands of curves is studied by means of a genetic algorithm. The extracted QPC parameter distributions are characterized in depth to get information about the filamentary pathways associated with LRS in the low voltage conduction regime.
Original languageEnglish
Article number014501
JournalJournal of Applied Physics
Volume123
Issue number1
DOIs
Publication statusPublished - 7 Jan 2018

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