Multivariate analysis and extraction of parameters in resistive RAMs using the Quantum Point Contact model

J. B. Roldán; E. Miranda; G. González-Cordero; P. García-Fernández; R. Romero-Zaliz; P. González-Rodelas; A. M. Aguilera; M. B. González; F. Jiménez-Molinos

doi:10.1063/1.5006995

Multivariate analysis and extraction of parameters in resistive RAMs using the Quantum Point Contact model

J. B. Roldán, E. Miranda, G. González-Cordero, P. García-Fernández, R. Romero-Zaliz, P. González-Rodelas, A. M. Aguilera, M. B. González, F. Jiménez-Molinos

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

10 Citations (Scopus)

Abstract

© 2018 Author(s). A multivariate analysis of the parameters that characterize the reset process in Resistive Random Access Memory (RRAM) has been performed. The different correlations obtained can help to shed light on the current components that contribute in the Low Resistance State (LRS) of the technology considered. In addition, a screening method for the Quantum Point Contact (QPC) current component is presented. For this purpose, the second derivative of the current has been obtained using a novel numerical method which allows determining the QPC model parameters. Once the procedure is completed, a whole Resistive Switching (RS) series of thousands of curves is studied by means of a genetic algorithm. The extracted QPC parameter distributions are characterized in depth to get information about the filamentary pathways associated with LRS in the low voltage conduction regime.

Original language	English
Article number	014501
Journal	Journal of Applied Physics
Volume	123
Issue number	1
DOIs	https://doi.org/10.1063/1.5006995
Publication status	Published - 7 Jan 2018

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Roldán, J. B., Miranda, E., González-Cordero, G., García-Fernández, P., Romero-Zaliz, R., González-Rodelas, P., Aguilera, A. M., González, M. B., & Jiménez-Molinos, F. (2018). Multivariate analysis and extraction of parameters in resistive RAMs using the Quantum Point Contact model. Journal of Applied Physics, 123(1), [014501]. https://doi.org/10.1063/1.5006995

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title = "Multivariate analysis and extraction of parameters in resistive RAMs using the Quantum Point Contact model",

abstract = "{\textcopyright} 2018 Author(s). A multivariate analysis of the parameters that characterize the reset process in Resistive Random Access Memory (RRAM) has been performed. The different correlations obtained can help to shed light on the current components that contribute in the Low Resistance State (LRS) of the technology considered. In addition, a screening method for the Quantum Point Contact (QPC) current component is presented. For this purpose, the second derivative of the current has been obtained using a novel numerical method which allows determining the QPC model parameters. Once the procedure is completed, a whole Resistive Switching (RS) series of thousands of curves is studied by means of a genetic algorithm. The extracted QPC parameter distributions are characterized in depth to get information about the filamentary pathways associated with LRS in the low voltage conduction regime.",

author = "Rold{\'a}n, {J. B.} and E. Miranda and G. Gonz{\'a}lez-Cordero and P. Garc{\'i}a-Fern{\'a}ndez and R. Romero-Zaliz and P. Gonz{\'a}lez-Rodelas and Aguilera, {A. M.} and Gonz{\'a}lez, {M. B.} and F. Jim{\'e}nez-Molinos",

year = "2018",

month = jan,

day = "7",

doi = "10.1063/1.5006995",

language = "English",

volume = "123",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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Multivariate analysis and extraction of parameters in resistive RAMs using the Quantum Point Contact model. / Roldán, J. B.; Miranda, E.; González-Cordero, G.; García-Fernández, P.; Romero-Zaliz, R.; González-Rodelas, P.; Aguilera, A. M.; González, M. B.; Jiménez-Molinos, F.

In: Journal of Applied Physics, Vol. 123, No. 1, 014501, 07.01.2018.

Research output: Contribution to journal › Article › Research › peer-review

TY - JOUR

T1 - Multivariate analysis and extraction of parameters in resistive RAMs using the Quantum Point Contact model

AU - Roldán, J. B.

AU - Miranda, E.

AU - González-Cordero, G.

AU - García-Fernández, P.

AU - Romero-Zaliz, R.

AU - González-Rodelas, P.

AU - Aguilera, A. M.

AU - González, M. B.

AU - Jiménez-Molinos, F.

PY - 2018/1/7

Y1 - 2018/1/7

N2 - © 2018 Author(s). A multivariate analysis of the parameters that characterize the reset process in Resistive Random Access Memory (RRAM) has been performed. The different correlations obtained can help to shed light on the current components that contribute in the Low Resistance State (LRS) of the technology considered. In addition, a screening method for the Quantum Point Contact (QPC) current component is presented. For this purpose, the second derivative of the current has been obtained using a novel numerical method which allows determining the QPC model parameters. Once the procedure is completed, a whole Resistive Switching (RS) series of thousands of curves is studied by means of a genetic algorithm. The extracted QPC parameter distributions are characterized in depth to get information about the filamentary pathways associated with LRS in the low voltage conduction regime.

AB - © 2018 Author(s). A multivariate analysis of the parameters that characterize the reset process in Resistive Random Access Memory (RRAM) has been performed. The different correlations obtained can help to shed light on the current components that contribute in the Low Resistance State (LRS) of the technology considered. In addition, a screening method for the Quantum Point Contact (QPC) current component is presented. For this purpose, the second derivative of the current has been obtained using a novel numerical method which allows determining the QPC model parameters. Once the procedure is completed, a whole Resistive Switching (RS) series of thousands of curves is studied by means of a genetic algorithm. The extracted QPC parameter distributions are characterized in depth to get information about the filamentary pathways associated with LRS in the low voltage conduction regime.

U2 - 10.1063/1.5006995

DO - 10.1063/1.5006995

M3 - Article

VL - 123

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 1

M1 - 014501

ER -

Multivariate analysis and extraction of parameters in resistive RAMs using the Quantum Point Contact model

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