Multiscale simulation of carbon nanotube transistors

Cristell Maneux, Sebastien Fregonese, Thomas Zimmer, Sylvie Retailleau, Huu Nha Nguyen, Damien Querlioz, Arnaud Bournel, Philippe Dollfus, François Triozon, Yann Michel Niquet, Stephan Roche

    Research output: Contribution to journalReview articleResearchpeer-review

    16 Citations (Scopus)


    In recent years, the understanding and accurate simulation of carbon nanotube-based transistors has become very challenging. Conventional simulation tools of microelectronics are necessary to predict the performance and use of nanotube transistors and circuits, but the models need to be refined to properly describe the full complexity of such novel type of devices at the nanoscale. Indeed, many issues such as contact resistance, low dimensional electrostatics and screening effects, demand for more accurate quantum approaches. This article reviews recent progresses on multiscale simulations which aim at bridging first principles calculations with compact modelling, including the comparison between semiclassical Monte Carlo and quantum transport approaches. © 2013 Elsevier Ltd. All rights reserved.
    Original languageEnglish
    Pages (from-to)26-67
    JournalSolid-State Electronics
    Publication statusPublished - 1 Jan 2013


    • Carbon nanotube transistors
    • Compact modelling
    • Monte Carlo simulation
    • NGF simulation
    • Physical simulation TCAD


    Dive into the research topics of 'Multiscale simulation of carbon nanotube transistors'. Together they form a unique fingerprint.

    Cite this