Multiple diode-like conduction in resistive switching SiO<inf>x</inf>-based MIM devices

E. Miranda; A. Mehonic; J. Blasco; J. Sune; A. J. Kenyon

doi:10.1109/TNANO.2014.2374232

Multiple diode-like conduction in resistive switching SiO<inf>x</inf>-based MIM devices

E. Miranda, A. Mehonic, J. Blasco, J. Sune, A. J. Kenyon

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

7 Citations (Scopus)

Abstract

© 2014 IEEE. Filamentary conduction in resistive switching metal-insulator-metal devices is often modeled from the circuital viewpoint using diode-like structures with series resistances. We show in this letter which arrangement of diodes and resistances is compatible with experimental multilevel set and reset I-V characteristics in electroformed TiN/SiOx/TiN structures. The proposed model is based on the solution of the generalized diode equation corresponding to N diodes arranged in parallel with a single series resistance. The model is simple yet accurate and it is able to capture the essential features exhibited by the I-V curves in the low and high bias regimes, revealing that a single equation can deal with both the low and high resistance states. An exact expression for the differential conductance suitable for small-signal analysis and circuit simulators is also provided.

Original language	English
Article number	6965633
Pages (from-to)	15-17
Journal	IEEE Transactions on Nanotechnology
Volume	14
Issue number	1
DOIs	https://doi.org/10.1109/TNANO.2014.2374232
Publication status	Published - 1 Jan 2015

Keywords

Metal-insulator-metal (MIM)
resistive switching
SiOx

Access to Document

10.1109/TNANO.2014.2374232

Cite this

@article{9ec5f4f7f4a3425d8741d783961add02,

title = "Multiple diode-like conduction in resistive switching SiOx-based MIM devices",

abstract = "{\textcopyright} 2014 IEEE. Filamentary conduction in resistive switching metal-insulator-metal devices is often modeled from the circuital viewpoint using diode-like structures with series resistances. We show in this letter which arrangement of diodes and resistances is compatible with experimental multilevel set and reset I-V characteristics in electroformed TiN/SiOx/TiN structures. The proposed model is based on the solution of the generalized diode equation corresponding to N diodes arranged in parallel with a single series resistance. The model is simple yet accurate and it is able to capture the essential features exhibited by the I-V curves in the low and high bias regimes, revealing that a single equation can deal with both the low and high resistance states. An exact expression for the differential conductance suitable for small-signal analysis and circuit simulators is also provided.",

keywords = "Metal-insulator-metal (MIM), resistive switching, SiOx",

author = "E. Miranda and A. Mehonic and J. Blasco and J. Sune and Kenyon, {A. J.}",

year = "2015",

month = jan,

day = "1",

doi = "10.1109/TNANO.2014.2374232",

language = "English",

volume = "14",

pages = "15--17",

journal = "IEEE Transactions on Nanotechnology",

issn = "1536-125X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Multiple diode-like conduction in resistive switching SiOx-based MIM devices

AU - Miranda, E.

AU - Mehonic, A.

AU - Blasco, J.

AU - Sune, J.

AU - Kenyon, A. J.

PY - 2015/1/1

Y1 - 2015/1/1

N2 - © 2014 IEEE. Filamentary conduction in resistive switching metal-insulator-metal devices is often modeled from the circuital viewpoint using diode-like structures with series resistances. We show in this letter which arrangement of diodes and resistances is compatible with experimental multilevel set and reset I-V characteristics in electroformed TiN/SiOx/TiN structures. The proposed model is based on the solution of the generalized diode equation corresponding to N diodes arranged in parallel with a single series resistance. The model is simple yet accurate and it is able to capture the essential features exhibited by the I-V curves in the low and high bias regimes, revealing that a single equation can deal with both the low and high resistance states. An exact expression for the differential conductance suitable for small-signal analysis and circuit simulators is also provided.

AB - © 2014 IEEE. Filamentary conduction in resistive switching metal-insulator-metal devices is often modeled from the circuital viewpoint using diode-like structures with series resistances. We show in this letter which arrangement of diodes and resistances is compatible with experimental multilevel set and reset I-V characteristics in electroformed TiN/SiOx/TiN structures. The proposed model is based on the solution of the generalized diode equation corresponding to N diodes arranged in parallel with a single series resistance. The model is simple yet accurate and it is able to capture the essential features exhibited by the I-V curves in the low and high bias regimes, revealing that a single equation can deal with both the low and high resistance states. An exact expression for the differential conductance suitable for small-signal analysis and circuit simulators is also provided.

KW - Metal-insulator-metal (MIM)

KW - resistive switching

KW - SiOx

U2 - 10.1109/TNANO.2014.2374232

DO - 10.1109/TNANO.2014.2374232

M3 - Article

SN - 1536-125X

VL - 14

SP - 15

EP - 17

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

IS - 1

M1 - 6965633

ER -

Multiple diode-like conduction in resistive switching SiO<inf>x</inf>-based MIM devices

Abstract

Keywords

Access to Document

Fingerprint

Cite this