Multiple diode-like conduction in resistive switching SiO<inf>x</inf>-based MIM devices

E. Miranda, A. Mehonic, J. Blasco, J. Sune, A. J. Kenyon

Research output: Contribution to journalArticleResearchpeer-review

7 Citations (Scopus)


© 2014 IEEE. Filamentary conduction in resistive switching metal-insulator-metal devices is often modeled from the circuital viewpoint using diode-like structures with series resistances. We show in this letter which arrangement of diodes and resistances is compatible with experimental multilevel set and reset I-V characteristics in electroformed TiN/SiOx/TiN structures. The proposed model is based on the solution of the generalized diode equation corresponding to N diodes arranged in parallel with a single series resistance. The model is simple yet accurate and it is able to capture the essential features exhibited by the I-V curves in the low and high bias regimes, revealing that a single equation can deal with both the low and high resistance states. An exact expression for the differential conductance suitable for small-signal analysis and circuit simulators is also provided.
Original languageEnglish
Article number6965633
Pages (from-to)15-17
JournalIEEE Transactions on Nanotechnology
Issue number1
Publication statusPublished - 1 Jan 2015


  • Metal-insulator-metal (MIM)
  • resistive switching
  • SiOx


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