We demonstrate the feasibility of multilevel recording in Pt/Bi 1-δFeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi 1-δFeO3 interface. A tunable population of up and down ferroelectric domains able to modulate the Schottky barrier height at the Pt/Bi1-δFeO3 interface can be achieved by means of either a collection of SET/RESET voltages or current compliances. This programming scheme gives rise to well defined resistance states, which form the basis for a multilevel storage nonvolatile memory. © 2013 AIP Publishing LLC.
|Journal||Applied Physics Letters|
|Publication status||Published - 23 Dec 2013|
Jiménez, D., Miranda, E., Tsurumaki-Fukuchi, A., Yamada, H., Suñé, J., & Sawa, A. (2013). Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories. Applied Physics Letters, 103, . https://doi.org/10.1063/1.4855155