Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

David Jiménez, Enrique Miranda, Atsushi Tsurumaki-Fukuchi, Hiroyuki Yamada, Jordi Suñé, Akihito Sawa

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18 Citations (Scopus)

Abstract

We demonstrate the feasibility of multilevel recording in Pt/Bi 1-δFeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi 1-δFeO3 interface. A tunable population of up and down ferroelectric domains able to modulate the Schottky barrier height at the Pt/Bi1-δFeO3 interface can be achieved by means of either a collection of SET/RESET voltages or current compliances. This programming scheme gives rise to well defined resistance states, which form the basis for a multilevel storage nonvolatile memory. © 2013 AIP Publishing LLC.
Original languageEnglish
Article number263502
JournalApplied Physics Letters
Volume103
DOIs
Publication statusPublished - 23 Dec 2013

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