Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

David Jiménez; Enrique Miranda; Atsushi Tsurumaki-Fukuchi; Hiroyuki Yamada; Jordi Suñé; Akihito Sawa

doi:10.1063/1.4855155

Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

David Jiménez, Enrique Miranda, Atsushi Tsurumaki-Fukuchi, Hiroyuki Yamada, Jordi Suñé, Akihito Sawa

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

22 Citations (Scopus)

Abstract

We demonstrate the feasibility of multilevel recording in Pt/Bi 1-δFeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi 1-δFeO3 interface. A tunable population of up and down ferroelectric domains able to modulate the Schottky barrier height at the Pt/Bi1-δFeO3 interface can be achieved by means of either a collection of SET/RESET voltages or current compliances. This programming scheme gives rise to well defined resistance states, which form the basis for a multilevel storage nonvolatile memory. © 2013 AIP Publishing LLC.

Original language	English
Article number	263502
Journal	Applied physics letters
Volume	103
DOIs	https://doi.org/10.1063/1.4855155
Publication status	Published - 23 Dec 2013

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10.1063/1.4855155

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title = "Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories",

abstract = "We demonstrate the feasibility of multilevel recording in Pt/Bi 1-δFeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi 1-δFeO3 interface. A tunable population of up and down ferroelectric domains able to modulate the Schottky barrier height at the Pt/Bi1-δFeO3 interface can be achieved by means of either a collection of SET/RESET voltages or current compliances. This programming scheme gives rise to well defined resistance states, which form the basis for a multilevel storage nonvolatile memory. {\textcopyright} 2013 AIP Publishing LLC.",

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Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories. / Jiménez, David ; Miranda, Enrique; Tsurumaki-Fukuchi, Atsushi et al.
In: Applied physics letters, Vol. 103, 263502, 23.12.2013.

Research output: Contribution to journal › Article › Research › peer-review

TY - JOUR

T1 - Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

AU - Jiménez, David

AU - Miranda, Enrique

AU - Tsurumaki-Fukuchi, Atsushi

AU - Yamada, Hiroyuki

AU - Suñé, Jordi

AU - Sawa, Akihito

PY - 2013/12/23

Y1 - 2013/12/23

N2 - We demonstrate the feasibility of multilevel recording in Pt/Bi 1-δFeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi 1-δFeO3 interface. A tunable population of up and down ferroelectric domains able to modulate the Schottky barrier height at the Pt/Bi1-δFeO3 interface can be achieved by means of either a collection of SET/RESET voltages or current compliances. This programming scheme gives rise to well defined resistance states, which form the basis for a multilevel storage nonvolatile memory. © 2013 AIP Publishing LLC.

AB - We demonstrate the feasibility of multilevel recording in Pt/Bi 1-δFeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi 1-δFeO3 interface. A tunable population of up and down ferroelectric domains able to modulate the Schottky barrier height at the Pt/Bi1-δFeO3 interface can be achieved by means of either a collection of SET/RESET voltages or current compliances. This programming scheme gives rise to well defined resistance states, which form the basis for a multilevel storage nonvolatile memory. © 2013 AIP Publishing LLC.

U2 - 10.1063/1.4855155

DO - 10.1063/1.4855155

M3 - Article

SN - 0003-6951

VL - 103

JO - Applied physics letters

JF - Applied physics letters

M1 - 263502

ER -

Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

Abstract

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