We demonstrate the feasibility of multilevel recording in Pt/Bi 1-δFeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi 1-δFeO3 interface. A tunable population of up and down ferroelectric domains able to modulate the Schottky barrier height at the Pt/Bi1-δFeO3 interface can be achieved by means of either a collection of SET/RESET voltages or current compliances. This programming scheme gives rise to well defined resistance states, which form the basis for a multilevel storage nonvolatile memory. © 2013 AIP Publishing LLC.
|Journal||Applied Physics Letters|
|Publication status||Published - 23 Dec 2013|