Multi-scale quantum point contact model for filamentary conduction in resistive random access memories devices

Xiaojuan Lian, Xavier Cartoixà, Enrique Miranda, Luca Perniola, Riccardo Rurali, Shibing Long, Ming Liu, Jordi Suñé

Research output: Contribution to journalArticleResearchpeer-review

40 Citations (Scopus)

Abstract

We depart from first-principle simulations of electron transport along paths of oxygen vacancies in HfO2 to reformulate the Quantum Point Contact (QPC) model in terms of a bundle of such vacancy paths. By doing this, the number of model parameters is reduced and a much clearer link between the microscopic structure of the conductive filament (CF) and its electrical properties can be provided. The new multi-scale QPC model is applied to two different HfO2-based devices operated in the unipolar and bipolar resistive switching (RS) modes. Extraction of the QPC model parameters from a statistically significant number of CFs allows revealing significant structural differences in the CF of these two types of devices and RS modes. © 2014 AIP Publishing LLC.
Original languageEnglish
Article number244507
JournalJournal of Applied Physics
Volume115
DOIs
Publication statusPublished - 28 Jun 2014

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