We depart from first-principle simulations of electron transport along paths of oxygen vacancies in HfO2 to reformulate the Quantum Point Contact (QPC) model in terms of a bundle of such vacancy paths. By doing this, the number of model parameters is reduced and a much clearer link between the microscopic structure of the conductive filament (CF) and its electrical properties can be provided. The new multi-scale QPC model is applied to two different HfO2-based devices operated in the unipolar and bipolar resistive switching (RS) modes. Extraction of the QPC model parameters from a statistically significant number of CFs allows revealing significant structural differences in the CF of these two types of devices and RS modes. © 2014 AIP Publishing LLC.
|Journal||Journal of Applied Physics|
|Publication status||Published - 28 Jun 2014|
Lian, X., Cartoixà, X., Miranda, E., Perniola, L., Rurali, R., Long, S., Liu, M., & Suñé, J. (2014). Multi-scale quantum point contact model for filamentary conduction in resistive random access memories devices. Journal of Applied Physics, 115, . https://doi.org/10.1063/1.4885419