Multi-channel conduction in redox-based resistive switch modelled using quantum point contact theory

E. Miranda, A. Mehonic, J. Suñé, A. J. Kenyon

Research output: Contribution to journalArticleResearchpeer-review

12 Citations (Scopus)

Abstract

A simple analytic model for the electron transport through filamentary-type structures in Si-rich silica (SiOx)-based resistive switches is proposed. The model is based on a mesoscopic description and is able to account for the linear and nonlinear components of conductance that arise from both fully and partially formed conductive channels spanning the dielectric film. Channels are represented by arrays of identical scatterers whose number and quantum transmission properties determine the current magnitude in the low and high resistance states. We show that the proposed model not only reproduces the experimental current-voltage (I-V) characteristics but also the normalized differential conductance (dln(I)/dln(V)-V) curves of devices under test. © 2013 AIP Publishing LLC.
Original languageEnglish
Article number222904
JournalApplied Physics Letters
Volume103
Issue number22
DOIs
Publication statusPublished - 25 Nov 2013

Fingerprint Dive into the research topics of 'Multi-channel conduction in redox-based resistive switch modelled using quantum point contact theory'. Together they form a unique fingerprint.

Cite this