MOSFET degradation dependence on input signal power in a RF power amplifier

A. Crespo-Yepes, E. Barajas, J. Martin-Martinez, D. Mateo, X. Aragones, R. Rodriguez, M. Nafria

Research output: Contribution to journalArticleResearchpeer-review

5 Citations (Scopus)

Abstract

© 2017 Elsevier B.V. Aging produced by RF stress is experimentally analyzed on a RF CMOS power amplifier (PA), as a function of the stress power level. The selected circuit topology allows observing individual NMOS and PMOS transistors degradations, as well as the aging effect on the circuit functionality. A direct relation between DC MOSFETs and RF PA (gain) parameters has been observed. NMOS degradation (both in mobility and Vth) is stronger than that of the PMOS. Results suggest that transistors mobility reduction is the main cause of the RF degradation in this circuit.
Original languageEnglish
Pages (from-to)289-292
JournalMicroelectronic Engineering
Volume178
DOIs
Publication statusPublished - 25 Jun 2017

Keywords

  • Aging
  • CMOS
  • MOSFET degradation
  • RF power amplifier
  • RF stress

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