Monte carlo study of dopant-segregated schottky barrier SoI MOSFETs: Enhancement of the rf performance

Maria J. Martin-Martinez, Carlos Couso, Elena Pascual, Raul Rengel

Research output: Contribution to journalArticleResearchpeer-review

9 Citations (Scopus)

Abstract

© 1963-2012 IEEE. This paper presents a detailed Monte Carlo study of the optimization of the dopant segregation (DS) layer in n-type Schottky barrier (SB)-MOSFET. It is shown that with a careful control of the DS layer parameters, dopant concentration (N-{\rm {dop}} ), and length (L-{\rm {dop}} ), the performance of the devices is significantly enhanced. The presence of the DS layer induces crucial effects in the injection processes at the Schottky contacts. The benefits of increasing the length and the doping level of the DS layer are studied from the microscopic point of view (transit times, average number of scatterings). The effect of varying these parameters is also analyzed through the nonquasi-static parameters of the small signal equivalent circuit, which can be useful for designers to improve the reliability of the SB-MOSFET technology.
Original languageEnglish
Article number6923470
Pages (from-to)3955-3961
JournalIEEE Transactions on Electron Devices
Volume61
Issue number12
DOIs
Publication statusPublished - 1 Dec 2014

Keywords

  • Dopant segregation (DS)
  • Monte Carlo methods
  • RF performance
  • Schottky barrier (SB)-MOSFETs.

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