Monte Carlo simulations of nanometric devices beyond the "mean-field" approximation

Guillem Albareda, J. Suñé, X. Oriols

Research output: Contribution to journalArticleResearchpeer-review

2 Citations (Scopus)


For nanoscale electron devices, the role of a single-electron (or a single-impurity) can have a large impact on their electrical characteristics. A new method for introducing the long-range and short-range Coulomb interaction in semiconductor semi-classical Monte Carlo simulations is presented. The method is based on directly dealing with a many-particle system by solving a different Poisson equation for each electron. The present work shows the numerical viability of this alternative approach for nanoscale devices with few (<100) electrons. The method is compared with the traditional "mean-field" Monte Carlo simulations. It is shown, numerically, that the "mean-field" approximation produces important errors for aggressively-scaled devices. © Springer Science+Business Media LLC 2008.
Original languageEnglish
Pages (from-to)197-200
JournalJournal of Computational Electronics
Publication statusPublished - 7 Feb 2008


  • Electron-electron scattering
  • Monte Carlo methods
  • Semiconductor device modeling


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