Monitoring defects in III-V materials: A nanoscale CAFM study

V. Iglesias, Q. Wu, M. Porti, M. Nafría, G. Bersuker, A. Cordes

Research output: Contribution to journalArticleResearchpeer-review

6 Citations (Scopus)


© 2015 Published by Elsevier B.V. Abstract The implementation of high mobility devices requires growing III-V materials on silicon substrates. However, due to the lattice mismatch between these materials, III-V semiconductors tend to develop structural defects affecting device electrical characteristics. In this study, the CAFM technique is employed for identification and analysis of nanoscale defects, in particular, Threading Dislocations (TD), Stacking Faults (SF) and Anti-phase Boundaries (APB), in III-V materials grown over silicon wafers.
Original languageEnglish
Article number9881
Pages (from-to)31-36
JournalMicroelectronic Engineering
Publication statusPublished - 1 Nov 2015


  • CAFM
  • High mobility substrates
  • III-V semiconductors
  • Threading Dislocations


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