TY - JOUR
T1 - Monitoring defects in III-V materials: A nanoscale CAFM study
AU - Iglesias, V.
AU - Wu, Q.
AU - Porti, M.
AU - Nafría, M.
AU - Bersuker, G.
AU - Cordes, A.
PY - 2015/11/1
Y1 - 2015/11/1
N2 - © 2015 Published by Elsevier B.V. Abstract The implementation of high mobility devices requires growing III-V materials on silicon substrates. However, due to the lattice mismatch between these materials, III-V semiconductors tend to develop structural defects affecting device electrical characteristics. In this study, the CAFM technique is employed for identification and analysis of nanoscale defects, in particular, Threading Dislocations (TD), Stacking Faults (SF) and Anti-phase Boundaries (APB), in III-V materials grown over silicon wafers.
AB - © 2015 Published by Elsevier B.V. Abstract The implementation of high mobility devices requires growing III-V materials on silicon substrates. However, due to the lattice mismatch between these materials, III-V semiconductors tend to develop structural defects affecting device electrical characteristics. In this study, the CAFM technique is employed for identification and analysis of nanoscale defects, in particular, Threading Dislocations (TD), Stacking Faults (SF) and Anti-phase Boundaries (APB), in III-V materials grown over silicon wafers.
KW - CAFM
KW - High mobility substrates
KW - III-V semiconductors
KW - Threading Dislocations
U2 - https://doi.org/10.1016/j.mee.2015.04.058
DO - https://doi.org/10.1016/j.mee.2015.04.058
M3 - Article
SN - 0167-9317
VL - 147
SP - 31
EP - 36
JO - Microelectronic Engineering
JF - Microelectronic Engineering
M1 - 9881
ER -