Modeling the post-breakdown current in MOS devices on p-silicon substrate

A. Ortiz-Conde; E. Miranda; F. J. García Sanchéz; E. Farkas; S. Malobabic

doi:10.1109/ICCDCS.2006.250828

Modeling the post-breakdown current in MOS devices on p-silicon substrate

A. Ortiz-Conde^*, E. Miranda, F. J. García Sanchéz, E. Farkas, S. Malobabic

^*Corresponding author for this work

Department of Electronic Engineering

Universidad Simón Bolívar de Venezuela

Research output: Chapter in Book › Chapter › Research › peer-review

3 Citations (Scopus)

Abstract

A model for the post-breakdown leakage current in MOS p-silicon devices with ultra thin oxides is presented. The model is based on a combination of two ideal diodes and two resistances. Model parameters are extracted using nonlinear optimization.

Original language	English
Title of host publication	2006 International Caribbean Conference on Devices, Circuits and Systems
Pages	13-16
Number of pages	4
DOIs	https://doi.org/10.1109/ICCDCS.2006.250828
Publication status	Published - 2006

Publication series

Name	Proceedings of the Sixth International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2006 - Final Program and Technical Digest

Keywords

Metal-oxide-semiconductor
Oxide breakdown
Reliability

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10.1109/ICCDCS.2006.250828

Cite this

Ortiz-Conde, A., Miranda, E., García Sanchéz, F. J., Farkas, E., & Malobabic, S. (2006). Modeling the post-breakdown current in MOS devices on p-silicon substrate. In 2006 International Caribbean Conference on Devices, Circuits and Systems (pp. 13-16). (Proceedings of the Sixth International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2006 - Final Program and Technical Digest). https://doi.org/10.1109/ICCDCS.2006.250828

Ortiz-Conde, A. ; Miranda, E. ; García Sanchéz, F. J. et al. / Modeling the post-breakdown current in MOS devices on p-silicon substrate. 2006 International Caribbean Conference on Devices, Circuits and Systems. 2006. pp. 13-16 (Proceedings of the Sixth International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2006 - Final Program and Technical Digest).

@inbook{7fb47c2366a34c889fb74059f46af76b,

title = "Modeling the post-breakdown current in MOS devices on p-silicon substrate",

abstract = "A model for the post-breakdown leakage current in MOS p-silicon devices with ultra thin oxides is presented. The model is based on a combination of two ideal diodes and two resistances. Model parameters are extracted using nonlinear optimization.",

keywords = "Metal-oxide-semiconductor, Oxide breakdown, Reliability",

author = "A. Ortiz-Conde and E. Miranda and {Garc{\'i}a Sanch{\'e}z}, {F. J.} and E. Farkas and S. Malobabic",

year = "2006",

doi = "10.1109/ICCDCS.2006.250828",

language = "English",

isbn = "1-4244-0041-4",

series = "Proceedings of the Sixth International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2006 - Final Program and Technical Digest",

pages = "13--16",

booktitle = "2006 International Caribbean Conference on Devices, Circuits and Systems",

}

Ortiz-Conde, A, Miranda, E, García Sanchéz, FJ, Farkas, E & Malobabic, S 2006, Modeling the post-breakdown current in MOS devices on p-silicon substrate. in 2006 International Caribbean Conference on Devices, Circuits and Systems. Proceedings of the Sixth International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2006 - Final Program and Technical Digest, pp. 13-16. https://doi.org/10.1109/ICCDCS.2006.250828

Modeling the post-breakdown current in MOS devices on p-silicon substrate. / Ortiz-Conde, A.; Miranda, E.; García Sanchéz, F. J. et al.
2006 International Caribbean Conference on Devices, Circuits and Systems. 2006. p. 13-16 (Proceedings of the Sixth International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2006 - Final Program and Technical Digest).

Research output: Chapter in Book › Chapter › Research › peer-review

TY - CHAP

T1 - Modeling the post-breakdown current in MOS devices on p-silicon substrate

AU - Ortiz-Conde, A.

AU - Miranda, E.

AU - García Sanchéz, F. J.

AU - Farkas, E.

AU - Malobabic, S.

PY - 2006

Y1 - 2006

N2 - A model for the post-breakdown leakage current in MOS p-silicon devices with ultra thin oxides is presented. The model is based on a combination of two ideal diodes and two resistances. Model parameters are extracted using nonlinear optimization.

AB - A model for the post-breakdown leakage current in MOS p-silicon devices with ultra thin oxides is presented. The model is based on a combination of two ideal diodes and two resistances. Model parameters are extracted using nonlinear optimization.

KW - Metal-oxide-semiconductor

KW - Oxide breakdown

KW - Reliability

UR - http://www.scopus.com/inward/record.url?scp=34250759823&partnerID=8YFLogxK

U2 - 10.1109/ICCDCS.2006.250828

DO - 10.1109/ICCDCS.2006.250828

M3 - Chapter

AN - SCOPUS:34250759823

SN - 1-4244-0041-4

T3 - Proceedings of the Sixth International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2006 - Final Program and Technical Digest

SP - 13

EP - 16

BT - 2006 International Caribbean Conference on Devices, Circuits and Systems

ER -

Ortiz-Conde A, Miranda E, García Sanchéz FJ, Farkas E, Malobabic S. Modeling the post-breakdown current in MOS devices on p-silicon substrate. In 2006 International Caribbean Conference on Devices, Circuits and Systems. 2006. p. 13-16. (Proceedings of the Sixth International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2006 - Final Program and Technical Digest). doi: 10.1109/ICCDCS.2006.250828

Modeling the post-breakdown current in MOS devices on p-silicon substrate

Abstract

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Keywords

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