Modeling the breakdown spots in silicon dioxide films as point contacts

Research output: Contribution to journalArticleResearchpeer-review

33 Citations (Scopus)

Abstract

Experiments and simulations are combined to demonstrate that the hard dielectric breakdown of thin SiO2 films in polycrystaline silicon/oxide/semiconductor structures leads to the formation of conduction paths with atomic-size dimensions which behave as point contacts between the silicon electrodes. Depending on the area of the breakdown spots, the conduction properties of the breakdown paths are shown to be those of a classical Sharvin point contact or of a quantum point contact. © 1999 American Institute of Physics.
Original languageEnglish
Pages (from-to)959-961
JournalApplied Physics Letters
Volume75
DOIs
Publication statusPublished - 16 Aug 1999

Fingerprint Dive into the research topics of 'Modeling the breakdown spots in silicon dioxide films as point contacts'. Together they form a unique fingerprint.

Cite this