Modeling the Breakdown and Breakdown Statistics of Ultra-Thin SiO2 Gate Oxides

J. Suñé, E. Wu

    Research output: Contribution to journalArticleResearch

    18 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)149-453
    JournalMicroelectronic Engineering
    Volume59
    DOIs
    Publication statusPublished - 1 Jan 2001

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