Modeling of the output characteristics of advanced n-MOSFETs after a severe gate-to-channel dielectric breakdown

E. Miranda, T. Kawanago, K. Kakushima, J. Suñé, H. Iwai

Research output: Contribution to journalArticleResearchpeer-review

Abstract

In this work, the effects of a gate-to-channel dielectric breakdown on the output characteristics of advanced La2O3-based metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated. The electrical behaviour is modeled using a potentiometer-like resistor network. It is shown how the relevant features that characterize a breakdown event in an MOS transistor: location of the failure site along the device channel, post-breakdown oxide resistance, and post-breakdown channel resistance, affect the mutual and drain transconductances of the device. The connection with the nonlinear current source model for broken down transistors is also discussed. © 2013 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)322-325
JournalMicroelectronic Engineering
Volume109
DOIs
Publication statusPublished - 3 May 2013

Keywords

  • MOS
  • MOSFET
  • Oxide breakdown
  • Oxide reliability

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