In this work, the effects of a gate-to-channel dielectric breakdown on the output characteristics of advanced La2O3-based metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated. The electrical behaviour is modeled using a potentiometer-like resistor network. It is shown how the relevant features that characterize a breakdown event in an MOS transistor: location of the failure site along the device channel, post-breakdown oxide resistance, and post-breakdown channel resistance, affect the mutual and drain transconductances of the device. The connection with the nonlinear current source model for broken down transistors is also discussed. © 2013 Elsevier B.V. All rights reserved.
|Publication status||Published - 3 May 2013|
- Oxide breakdown
- Oxide reliability