Modeling of the I-V and I-t characteristics of multiferroic BiFeO3 layers

E. Miranda; D. Jimenez; J. Blasco; J. Sune; A. Tsurumaki-Fukuchi; H. Yamada; A. Sawa

doi:10.1109/CDE.2015.7087449

Modeling of the I-V and I-t characteristics of multiferroic BiFeO₃ layers

E. Miranda, D. Jimenez, J. Blasco, J. Sune, A. Tsurumaki-Fukuchi, H. Yamada, A. Sawa

Department of Electronic Engineering

Research output: Chapter in Book › Chapter › Research › peer-review

Abstract

We have investigated the current-voltage (I-V) and current-time (I-t) characteristics of Pt/BiFeO₃/SrRuO₃ structures fabricated on SrTiO₃ substrates. The devices exhibit resistive switching effect under the application of a single and multiple voltage loops. The I-V curves are simulated using a Schottky-like conduction model with voltage-varying parameters. The model includes series resistance correction and barrier lowering effect. The I-t curves are fitted using a power-law model. It is found that the Schottky barrier height (SBH) modulation arising from the BiFeO₃ polarization reversal is remarkably lower (<0.07 eV) than previously reported (>0.5 eV) and that the ON current decay for a constant applied voltage is low and characterized by very small power exponent (∼10^-2). This indicates that the ON state is remarkably stable against electrical stress.

Original language	English
Title of host publication	2015 10th Spanish Conference on Electron Devices (CDE)
Number of pages	3
ISBN (Electronic)	978-1-4799-8108-3
DOIs	https://doi.org/10.1109/CDE.2015.7087449
Publication status	Published - 16 Apr 2015

Publication series

Name	Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015

Keywords

BiFeO
Hysteresis
Multiferroic
Resistive Switching

Access to Document

10.1109/CDE.2015.7087449

Cite this

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title = "Modeling of the I-V and I-t characteristics of multiferroic BiFeO3 layers",

abstract = "We have investigated the current-voltage (I-V) and current-time (I-t) characteristics of Pt/BiFeO3/SrRuO3 structures fabricated on SrTiO3 substrates. The devices exhibit resistive switching effect under the application of a single and multiple voltage loops. The I-V curves are simulated using a Schottky-like conduction model with voltage-varying parameters. The model includes series resistance correction and barrier lowering effect. The I-t curves are fitted using a power-law model. It is found that the Schottky barrier height (SBH) modulation arising from the BiFeO3 polarization reversal is remarkably lower (<0.07 eV) than previously reported (>0.5 eV) and that the ON current decay for a constant applied voltage is low and characterized by very small power exponent (∼10-2). This indicates that the ON state is remarkably stable against electrical stress.",

keywords = "BiFeO, Hysteresis, Multiferroic, Resistive Switching",

author = "E. Miranda and D. Jimenez and J. Blasco and J. Sune and A. Tsurumaki-Fukuchi and H. Yamada and A. Sawa",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2015",

month = apr,

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doi = "10.1109/CDE.2015.7087449",

language = "English",

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T1 - Modeling of the I-V and I-t characteristics of multiferroic BiFeO3 layers

AU - Miranda, E.

AU - Jimenez, D.

AU - Blasco, J.

AU - Sune, J.

AU - Tsurumaki-Fukuchi, A.

AU - Yamada, H.

AU - Sawa, A.

PY - 2015/4/16

Y1 - 2015/4/16

N2 - We have investigated the current-voltage (I-V) and current-time (I-t) characteristics of Pt/BiFeO3/SrRuO3 structures fabricated on SrTiO3 substrates. The devices exhibit resistive switching effect under the application of a single and multiple voltage loops. The I-V curves are simulated using a Schottky-like conduction model with voltage-varying parameters. The model includes series resistance correction and barrier lowering effect. The I-t curves are fitted using a power-law model. It is found that the Schottky barrier height (SBH) modulation arising from the BiFeO3 polarization reversal is remarkably lower (<0.07 eV) than previously reported (>0.5 eV) and that the ON current decay for a constant applied voltage is low and characterized by very small power exponent (∼10-2). This indicates that the ON state is remarkably stable against electrical stress.

AB - We have investigated the current-voltage (I-V) and current-time (I-t) characteristics of Pt/BiFeO3/SrRuO3 structures fabricated on SrTiO3 substrates. The devices exhibit resistive switching effect under the application of a single and multiple voltage loops. The I-V curves are simulated using a Schottky-like conduction model with voltage-varying parameters. The model includes series resistance correction and barrier lowering effect. The I-t curves are fitted using a power-law model. It is found that the Schottky barrier height (SBH) modulation arising from the BiFeO3 polarization reversal is remarkably lower (<0.07 eV) than previously reported (>0.5 eV) and that the ON current decay for a constant applied voltage is low and characterized by very small power exponent (∼10-2). This indicates that the ON state is remarkably stable against electrical stress.

KW - BiFeO

KW - Hysteresis

KW - Multiferroic

KW - Resistive Switching

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