Modeling of the Hysteretic I-V Characteristics of TiO2-Based Resistive Switches Using the Generalized Diode Equation

Jorge Francisco Suñe Tarruella, Javier Leal Blasco, N. Ghenzi, P. Levy, E. Miranda

Research output: Contribution to journal › Article › Research

Original language	English
Pages (from-to)	-
Journal	IEEE Electron Device Letters
Publication status	Published - 1 Jan 2014

Cite this

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title = "Modeling of the Hysteretic I-V Characteristics of TiO2-Based Resistive Switches Using the Generalized Diode Equation",

author = "{Su{\~n}e Tarruella}, {Jorge Francisco} and {Leal Blasco}, Javier and N. Ghenzi and P. Levy and E. Miranda",

year = "2014",

month = jan,

day = "1",

language = "English",

pages = "--",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Modeling of the Hysteretic I-V Characteristics of TiO2-Based Resistive Switches Using the Generalized Diode Equation

AU - Suñe Tarruella, Jorge Francisco

AU - Leal Blasco, Javier

AU - Ghenzi, N.

AU - Levy, P.

AU - Miranda, E.

PY - 2014/1/1

Y1 - 2014/1/1

M3 - Article

SP - -

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

ER -