Modeling of hysteretic Schottky diode-like conduction in Pt/BiFeO 3/SrRuO3 switches

E. Miranda; D. Jiménez; A. Tsurumaki-Fukuchi; J. Blasco; H. Yamada; J. Suñé; A. Sawa

doi:10.1063/1.4894116

Modeling of hysteretic Schottky diode-like conduction in Pt/BiFeO ₃/SrRuO₃ switches

E. Miranda^*, D. Jiménez, A. Tsurumaki-Fukuchi, J. Blasco, H. Yamada, J. Suñé, A. Sawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › Research › peer-review

13 Citations (Scopus)

Abstract

The hysteresis current-voltage (I-V) loops in Pt/BiFeO₃/ SrRuO₃ structures are simulated using a Schottky diode-like conduction model with sigmoidally varying parameters, including series resistance correction and barrier lowering. The evolution of the system is represented by a vector in a 3D parameter space describing a closed trajectory with stationary states. It is shown that the hysteretic behavior is not only the result of a Schottky barrier height (SBH) variation arising from the BiFeO ₃ polarization reversal but also a consequence of the potential drop distribution across the device. The SBH modulation is found to be remarkably lower (<0.07 eV) than previously reported (>0.5 eV). It is also shown that the p-type semiconducting nature of BiFeO₃ can explain the large ideality factors (>6) required to simulate the I-V curves as well as the highly asymmetric set and reset voltages (4.7 V and -1.9 V) exhibited by our devices.

Original language	English
Article number	082904
Number of pages	4
Journal	Applied physics letters
Volume	105
Issue number	8
DOIs	https://doi.org/10.1063/1.4894116
Publication status	Published - 26 Aug 2014

Keywords

Display devices
Schottky diodes
Current-voltage characteristic
Electrostatics
Ferroelectric materials
Magnetic materials
Multiferroics
Resistive switching
Transition metal oxides

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https://ddd.uab.cat/record/182943

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title = "Modeling of hysteretic Schottky diode-like conduction in Pt/BiFeO 3/SrRuO3 switches",

abstract = "The hysteresis current-voltage (I-V) loops in Pt/BiFeO3/ SrRuO3 structures are simulated using a Schottky diode-like conduction model with sigmoidally varying parameters, including series resistance correction and barrier lowering. The evolution of the system is represented by a vector in a 3D parameter space describing a closed trajectory with stationary states. It is shown that the hysteretic behavior is not only the result of a Schottky barrier height (SBH) variation arising from the BiFeO 3 polarization reversal but also a consequence of the potential drop distribution across the device. The SBH modulation is found to be remarkably lower (<0.07 eV) than previously reported (>0.5 eV). It is also shown that the p-type semiconducting nature of BiFeO3 can explain the large ideality factors (>6) required to simulate the I-V curves as well as the highly asymmetric set and reset voltages (4.7 V and -1.9 V) exhibited by our devices.",

keywords = "Display devices, Schottky diodes, Current-voltage characteristic, Electrostatics, Ferroelectric materials, Magnetic materials, Multiferroics, Resistive switching, Transition metal oxides",

author = "E. Miranda and D. Jim{\'e}nez and A. Tsurumaki-Fukuchi and J. Blasco and H. Yamada and J. Su{\~n}{\'e} and A. Sawa",

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AU - Miranda, E.

AU - Jiménez, D.

AU - Tsurumaki-Fukuchi, A.

AU - Blasco, J.

AU - Yamada, H.

AU - Suñé, J.

AU - Sawa, A.

PY - 2014/8/26

Y1 - 2014/8/26

N2 - The hysteresis current-voltage (I-V) loops in Pt/BiFeO3/ SrRuO3 structures are simulated using a Schottky diode-like conduction model with sigmoidally varying parameters, including series resistance correction and barrier lowering. The evolution of the system is represented by a vector in a 3D parameter space describing a closed trajectory with stationary states. It is shown that the hysteretic behavior is not only the result of a Schottky barrier height (SBH) variation arising from the BiFeO 3 polarization reversal but also a consequence of the potential drop distribution across the device. The SBH modulation is found to be remarkably lower (<0.07 eV) than previously reported (>0.5 eV). It is also shown that the p-type semiconducting nature of BiFeO3 can explain the large ideality factors (>6) required to simulate the I-V curves as well as the highly asymmetric set and reset voltages (4.7 V and -1.9 V) exhibited by our devices.

AB - The hysteresis current-voltage (I-V) loops in Pt/BiFeO3/ SrRuO3 structures are simulated using a Schottky diode-like conduction model with sigmoidally varying parameters, including series resistance correction and barrier lowering. The evolution of the system is represented by a vector in a 3D parameter space describing a closed trajectory with stationary states. It is shown that the hysteretic behavior is not only the result of a Schottky barrier height (SBH) variation arising from the BiFeO 3 polarization reversal but also a consequence of the potential drop distribution across the device. The SBH modulation is found to be remarkably lower (<0.07 eV) than previously reported (>0.5 eV). It is also shown that the p-type semiconducting nature of BiFeO3 can explain the large ideality factors (>6) required to simulate the I-V curves as well as the highly asymmetric set and reset voltages (4.7 V and -1.9 V) exhibited by our devices.

KW - Display devices

KW - Schottky diodes

KW - Current-voltage characteristic

KW - Electrostatics

KW - Ferroelectric materials

KW - Magnetic materials

KW - Multiferroics

KW - Resistive switching

KW - Transition metal oxides

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Modeling of hysteretic Schottky diode-like conduction in Pt/BiFeO ₃/SrRuO₃ switches

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