Model-independent determination of the degradation dynamics of thin SiO<inf>2</inf> films

Research output: Contribution to journalArticleResearchpeer-review

Abstract

The degradation dynamics of thin SiO2 films is analyzed using a two-step stress procedure. The results point out that the degradation proceeds in two stages (with quite different time constants) which have an effect in the current evolution. It is shown that the fitting of the I-t characteristics can provide quantitative information on the degradation (degradation rate) and breakdown (mean-time-to-breakdown), without any assumption on the degradation mechanism.
Original languageEnglish
Pages (from-to)891-895
JournalMicroelectronics Reliability
Volume39
Issue number6-7
DOIs
Publication statusPublished - 1 Jan 1999

Fingerprint Dive into the research topics of 'Model-independent determination of the degradation dynamics of thin SiO<inf>2</inf> films'. Together they form a unique fingerprint.

Cite this