Model-independent determination of the degradation dynamics of thin SiO<inf>2</inf> films

R. Rodríguez; M. Nafría; E. Miranda; J. Suñé; X. Aymerich

doi:10.1016/S0026-2714(99)00119-5

Model-independent determination of the degradation dynamics of thin SiO<inf>2</inf> films

R. Rodríguez, M. Nafría, E. Miranda, J. Suñé, X. Aymerich

Research output: Contribution to journal › Article › Research › peer-review

Abstract

The degradation dynamics of thin SiO2 films is analyzed using a two-step stress procedure. The results point out that the degradation proceeds in two stages (with quite different time constants) which have an effect in the current evolution. It is shown that the fitting of the I-t characteristics can provide quantitative information on the degradation (degradation rate) and breakdown (mean-time-to-breakdown), without any assumption on the degradation mechanism.

Original language	English
Pages (from-to)	891-895
Journal	Microelectronics Reliability
Volume	39
Issue number	6-7
DOIs	https://doi.org/10.1016/S0026-2714(99)00119-5
Publication status	Published - 1 Jan 1999

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10.1016/S0026-2714(99)00119-5

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@article{f4d5a0cf1bd342debd0f8d560d259f1b,

title = "Model-independent determination of the degradation dynamics of thin SiO2 films",

abstract = "The degradation dynamics of thin SiO2 films is analyzed using a two-step stress procedure. The results point out that the degradation proceeds in two stages (with quite different time constants) which have an effect in the current evolution. It is shown that the fitting of the I-t characteristics can provide quantitative information on the degradation (degradation rate) and breakdown (mean-time-to-breakdown), without any assumption on the degradation mechanism.",

author = "R. Rodr{\'i}guez and M. Nafr{\'i}a and E. Miranda and J. Su{\~n}{\'e} and X. Aymerich",

year = "1999",

month = jan,

day = "1",

doi = "10.1016/S0026-2714(99)00119-5",

language = "English",

volume = "39",

pages = "891--895",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

number = "6-7",

}

TY - JOUR

T1 - Model-independent determination of the degradation dynamics of thin SiO2 films

AU - Rodríguez, R.

AU - Nafría, M.

AU - Miranda, E.

AU - Suñé, J.

AU - Aymerich, X.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - The degradation dynamics of thin SiO2 films is analyzed using a two-step stress procedure. The results point out that the degradation proceeds in two stages (with quite different time constants) which have an effect in the current evolution. It is shown that the fitting of the I-t characteristics can provide quantitative information on the degradation (degradation rate) and breakdown (mean-time-to-breakdown), without any assumption on the degradation mechanism.

AB - The degradation dynamics of thin SiO2 films is analyzed using a two-step stress procedure. The results point out that the degradation proceeds in two stages (with quite different time constants) which have an effect in the current evolution. It is shown that the fitting of the I-t characteristics can provide quantitative information on the degradation (degradation rate) and breakdown (mean-time-to-breakdown), without any assumption on the degradation mechanism.

U2 - 10.1016/S0026-2714(99)00119-5

DO - 10.1016/S0026-2714(99)00119-5

M3 - Article

VL - 39

SP - 891

EP - 895

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

IS - 6-7

ER -

Model-independent determination of the degradation dynamics of thin SiO<inf>2</inf> films

Abstract

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