Model for the resistive switching effect in HfO<inf>2</inf> MIM structures based on the transmission properties of narrow constrictions

Enrique A. Miranda; Christian Walczyk; Christian Wenger; Thomas Schroeder

doi:10.1109/LED.2010.2046310

Model for the resistive switching effect in HfO<inf>2</inf> MIM structures based on the transmission properties of narrow constrictions

Enrique A. Miranda, Christian Walczyk, Christian Wenger, Thomas Schroeder

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

139 Citations (Scopus)

Abstract

A physics-based analytical model for the currentvoltage (I-V) characteristics corresponding to the low and high resistive states in electroformed metal-insulator-metal structures with HfO2 layers is proposed. The model relies on the Landauer theory for the electron transport in mesoscopic systems. The switching phenomenon is ascribed to the modulation of the constriction's bottleneck cross-sectional area associated with atomic rearrangements within the confinement path. The extracted parameter values allow one to conclude that the length and radius of the region that controls the conduction characteristics are in the nanometer range. © 2006 IEEE.

Original language	English
Article number	5454260
Pages (from-to)	609-611
Journal	IEEE Electron Device Letters
Volume	31
Issue number	6
DOIs	https://doi.org/10.1109/LED.2010.2046310
Publication status	Published - 1 Jun 2010

Keywords

Dielectric breakdown
High-k
Metal-insulator-metal (MIM)

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10.1109/LED.2010.2046310

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title = "Model for the resistive switching effect in HfO2 MIM structures based on the transmission properties of narrow constrictions",

abstract = "A physics-based analytical model for the currentvoltage (I-V) characteristics corresponding to the low and high resistive states in electroformed metal-insulator-metal structures with HfO2 layers is proposed. The model relies on the Landauer theory for the electron transport in mesoscopic systems. The switching phenomenon is ascribed to the modulation of the constriction's bottleneck cross-sectional area associated with atomic rearrangements within the confinement path. The extracted parameter values allow one to conclude that the length and radius of the region that controls the conduction characteristics are in the nanometer range. {\textcopyright} 2006 IEEE.",

keywords = "Dielectric breakdown, High-k, Metal-insulator-metal (MIM)",

author = "Miranda, {Enrique A.} and Christian Walczyk and Christian Wenger and Thomas Schroeder",

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doi = "10.1109/LED.2010.2046310",

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Model for the resistive switching effect in HfO<inf>2</inf> MIM structures based on the transmission properties of narrow constrictions. / Miranda, Enrique A.; Walczyk, Christian; Wenger, Christian; Schroeder, Thomas.

In: IEEE Electron Device Letters, Vol. 31, No. 6, 5454260, 01.06.2010, p. 609-611.

Research output: Contribution to journal › Article › Research › peer-review

TY - JOUR

T1 - Model for the resistive switching effect in HfO2 MIM structures based on the transmission properties of narrow constrictions

AU - Miranda, Enrique A.

AU - Walczyk, Christian

AU - Wenger, Christian

AU - Schroeder, Thomas

PY - 2010/6/1

Y1 - 2010/6/1

N2 - A physics-based analytical model for the currentvoltage (I-V) characteristics corresponding to the low and high resistive states in electroformed metal-insulator-metal structures with HfO2 layers is proposed. The model relies on the Landauer theory for the electron transport in mesoscopic systems. The switching phenomenon is ascribed to the modulation of the constriction's bottleneck cross-sectional area associated with atomic rearrangements within the confinement path. The extracted parameter values allow one to conclude that the length and radius of the region that controls the conduction characteristics are in the nanometer range. © 2006 IEEE.

AB - A physics-based analytical model for the currentvoltage (I-V) characteristics corresponding to the low and high resistive states in electroformed metal-insulator-metal structures with HfO2 layers is proposed. The model relies on the Landauer theory for the electron transport in mesoscopic systems. The switching phenomenon is ascribed to the modulation of the constriction's bottleneck cross-sectional area associated with atomic rearrangements within the confinement path. The extracted parameter values allow one to conclude that the length and radius of the region that controls the conduction characteristics are in the nanometer range. © 2006 IEEE.

KW - Dielectric breakdown

KW - High-k

KW - Metal-insulator-metal (MIM)

U2 - 10.1109/LED.2010.2046310

DO - 10.1109/LED.2010.2046310

M3 - Article

VL - 31

SP - 609

EP - 611

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 6

M1 - 5454260

ER -

Model for the resistive switching effect in HfO<inf>2</inf> MIM structures based on the transmission properties of narrow constrictions

Abstract

Keywords

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