Model for the resistive switching effect in HfO2 MIM structures based on the transmission properties of narrow constrictions

E. Miranda, Ch Walczyk, Ch Wenger, T. Schroeder

Research output: Contribution to journalArticleResearch

135 Citations (Scopus)
Original languageEnglish
Pages (from-to)---
JournalIEEE Electron Device Letters
Publication statusPublished - 1 Jan 2010

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