Model for the resistive switching effect in HfO2 MIM structures based on the transmission properties of narrow constrictions

E. Miranda, Ch Walczyk, Ch Wenger, T. Schroeder

Research output: Contribution to journal › Article › Research

Original language	English
Pages (from-to)	---
Journal	IEEE Electron Device Letters
Publication status	Published - 1 Jan 2010

Cite this

@article{54f364de954b44d69f18d042d274346e,

title = "Model for the resistive switching effect in HfO2 MIM structures based on the transmission properties of narrow constrictions",

author = "E. Miranda and Ch Walczyk and Ch Wenger and T. Schroeder",

year = "2010",

month = jan,

day = "1",

language = "English",

pages = "------",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}