© 1980-2012 IEEE. The switching current-voltage (I-V) characteristics of high-permittivity (high-κ) Al<inf>2</inf>O<inf>3</inf>/TiO<inf>2</inf> stacks are modeled using the double diode equation in combination with a recursive hysteresis operator that represents the memory state of the device. The model uses the outer experimental I-V loop corresponding to the maximum excursion of the input signal and current compliance as the calibration curve. It is shown that an asymmetric logistic-type dynamics for the system state variable is able to account for the abrupt set and progressive reset transitions. Additional recovery effects occurring close to the input signal turning points are also modeled by considering a proper extension of the original operator.
- Resistive switching