MOCVD Growth and Characterization of 3C-SiC on Si(100)

J. Rodríguez; M.T. Clavaguera-Mora; N. Clavaguera; G. Arnaud; J. Camassel; J. Pascual; C. Domínguez; S. Berberich; J. Millán

MOCVD Growth and Characterization of 3C-SiC on Si(100)

J. Rodríguez, M.T. Clavaguera-Mora, N. Clavaguera, G. Arnaud, J. Camassel, J. Pascual, C. Domínguez, S. Berberich, J. Millán

Department of Physics

Research output: Contribution to journal › Article › Research › peer-review

Original language	English
Pages (from-to)	251-266
Journal	Advances in Science and Technology
Issue number	6
Publication status	Published - 1 Jan 1995

Cite this

@article{bee0992578354ea89a2da96156a5982a,

title = "MOCVD Growth and Characterization of 3C-SiC on Si(100)",

author = "J. Rodr{\'i}guez and M.T. Clavaguera-Mora and N. Clavaguera and G. Arnaud and J. Camassel and J. Pascual and C. Dom{\'i}nguez and S. Berberich and J. Mill{\'a}n",

year = "1995",

month = jan,

day = "1",

language = "English",

pages = "251--266",

number = "6",

}