In this work, the electrical properties of Metal-Insulator-Semiconductor devices with graphene intercalated between the HfO2 dielectric and the gate electrode were studied at the nanometer scale (with a Conductive Atomic Force Microscope) and at device level. Their feasibility as ReRAM devices was also evaluated. At device level, when graphene is used as an interfacial layer, several resistive switching cycles were observed, meanwhile the standard structures without graphene did not show resistive switching behavior. Nanoscale analysis have shown that graphene avoids the complete microstructural damage of the oxide material during the forming process, demonstrating the protective role of the intercalated graphene layer in ReRAM structures.
|Journal||2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020|
|Publication status||Published - 1 Sep 2020|
- non-volatile memory