Microscopic and optical investigation of Ge nanoislands on silicon substrates

Z. F. Krasil'nik; P. Lytvyn; D. N. Lobanov; N. Mestres; A. V. Novikov; J. Pascual; M. Ya Valakh; V. A. Yukhymchuk

doi:https://doi.org/10.1088/0957-4484/13/1/318

Microscopic and optical investigation of Ge nanoislands on silicon substrates

Z. F. Krasil'nik, P. Lytvyn, D. N. Lobanov, N. Mestres, A. V. Novikov, J. Pascual, M. Ya Valakh, V. A. Yukhymchuk

Department of Physics

Research output: Contribution to journal › Article › Research › peer-review

39 Citations (Scopus)

Abstract

Atomic force microscopy and micro-Raman scattering techniques were used to investigate self-assembled nanoislands in heteroepitaxial GeSi systems. The temperature increase showed strong enhancement in the surface diffusion of Si atoms from the substrate to the islands, giving rise to a wider stability range of pyramid-shaped volumes. The results showed that a high concentration of Ge islands were obtained on Si(100) surfaces with a narrow size distribution, at low temperatures.

Original language	English
Pages (from-to)	81-85
Journal	Nanotechnology
Volume	13
DOIs	https://doi.org/10.1088/0957-4484/13/1/318
Publication status	Published - 1 Feb 2002

Access to Document

https://doi.org/10.1088/0957-4484/13/1/318

Fingerprint Dive into the research topics of 'Microscopic and optical investigation of Ge nanoislands on silicon substrates'. Together they form a unique fingerprint.

Cite this

@article{c6777e5bb28b45edbd930c77e13895b4,

title = "Microscopic and optical investigation of Ge nanoislands on silicon substrates",

abstract = "Atomic force microscopy and micro-Raman scattering techniques were used to investigate self-assembled nanoislands in heteroepitaxial GeSi systems. The temperature increase showed strong enhancement in the surface diffusion of Si atoms from the substrate to the islands, giving rise to a wider stability range of pyramid-shaped volumes. The results showed that a high concentration of Ge islands were obtained on Si(100) surfaces with a narrow size distribution, at low temperatures.",

author = "Krasil'nik, {Z. F.} and P. Lytvyn and Lobanov, {D. N.} and N. Mestres and Novikov, {A. V.} and J. Pascual and Valakh, {M. Ya} and Yukhymchuk, {V. A.}",

year = "2002",

month = feb,

day = "1",

doi = "https://doi.org/10.1088/0957-4484/13/1/318",

language = "English",

volume = "13",

pages = "81--85",

journal = "Nanotechnology",

issn = "0957-4484",

}

TY - JOUR

T1 - Microscopic and optical investigation of Ge nanoislands on silicon substrates

AU - Krasil'nik, Z. F.

AU - Lytvyn, P.

AU - Lobanov, D. N.

AU - Mestres, N.

AU - Novikov, A. V.

AU - Pascual, J.

AU - Valakh, M. Ya

AU - Yukhymchuk, V. A.

PY - 2002/2/1

Y1 - 2002/2/1

N2 - Atomic force microscopy and micro-Raman scattering techniques were used to investigate self-assembled nanoislands in heteroepitaxial GeSi systems. The temperature increase showed strong enhancement in the surface diffusion of Si atoms from the substrate to the islands, giving rise to a wider stability range of pyramid-shaped volumes. The results showed that a high concentration of Ge islands were obtained on Si(100) surfaces with a narrow size distribution, at low temperatures.

AB - Atomic force microscopy and micro-Raman scattering techniques were used to investigate self-assembled nanoislands in heteroepitaxial GeSi systems. The temperature increase showed strong enhancement in the surface diffusion of Si atoms from the substrate to the islands, giving rise to a wider stability range of pyramid-shaped volumes. The results showed that a high concentration of Ge islands were obtained on Si(100) surfaces with a narrow size distribution, at low temperatures.

U2 - https://doi.org/10.1088/0957-4484/13/1/318

DO - https://doi.org/10.1088/0957-4484/13/1/318

M3 - Article

VL - 13

SP - 81

EP - 85

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

ER -