Abstract
Atomic force microscopy and micro-Raman scattering techniques were used to investigate self-assembled nanoislands in heteroepitaxial GeSi systems. The temperature increase showed strong enhancement in the surface diffusion of Si atoms from the substrate to the islands, giving rise to a wider stability range of pyramid-shaped volumes. The results showed that a high concentration of Ge islands were obtained on Si(100) surfaces with a narrow size distribution, at low temperatures.
Original language | English |
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Pages (from-to) | 81-85 |
Journal | Nanotechnology |
Volume | 13 |
DOIs | |
Publication status | Published - 1 Feb 2002 |