Microscopic and optical investigation of Ge nanoislands on silicon substrates

Z. F. Krasil'nik, P. Lytvyn, D. N. Lobanov, N. Mestres, A. V. Novikov, J. Pascual, M. Ya Valakh, V. A. Yukhymchuk

Research output: Contribution to journalArticleResearchpeer-review

39 Citations (Scopus)

Abstract

Atomic force microscopy and micro-Raman scattering techniques were used to investigate self-assembled nanoislands in heteroepitaxial GeSi systems. The temperature increase showed strong enhancement in the surface diffusion of Si atoms from the substrate to the islands, giving rise to a wider stability range of pyramid-shaped volumes. The results showed that a high concentration of Ge islands were obtained on Si(100) surfaces with a narrow size distribution, at low temperatures.
Original languageEnglish
Pages (from-to)81-85
JournalNanotechnology
Volume13
DOIs
Publication statusPublished - 1 Feb 2002

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