Method for extracting series resistance in MOS devices using Fowler-Nordheim plot

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12 Citations (Scopus)

Abstract

A new method for determining the series resistance affecting the tunnelling current in MOS devices is presented. The proposed approach consists of considering the effect of the potential drop associated with this resistance on the Fowler-Nordheim tunnelling expression. The resistance is found by forcing the highest possible linearity of the Fowler-Nordheim plot.
Original languageEnglish
Pages (from-to)1153-1154
JournalElectronics Letters
Volume40
DOIs
Publication statusPublished - 2 Sep 2004

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