Mechanisms of hydrogen release in the breakdown of SiO2-based gate oxides

J. Suñé, E.Y. Wu

    Research output: Contribution to journalArticleResearch

    26 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)388-391
    JournalTechnical Digest - International Electron Devices Meeting
    Volume2005
    Issue number1609359
    Publication statusPublished - 1 Jan 2005

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