Measurement of mobility and lifetime of electrons and holes in a Schottky CdTe diode

Gerard Ariño-Estrada; Mokhtar Chmeissani; Gianluca De Lorenzo; Machiel Kolstein; Carles Puigdengoles; J. García; Enric Cabruja i Casas

doi:10.1088/1748-0221/9/12/C12032

Measurement of mobility and lifetime of electrons and holes in a Schottky CdTe diode

Gerard Ariño-Estrada, Mokhtar Chmeissani, Gianluca De Lorenzo, Machiel Kolstein, Carles Puigdengoles, J. García, Enric Cabruja i Casas

Institute of High Energy Physics (IFAE)

Research output: Contribution to journal › Article › Research › peer-review

25 Citations (Scopus)

Abstract

We report on the measurement of drift properties of electrons and holes in a CdTe diode grown by the travelling heating method (THM). Mobility and lifetime of both charge carriers has been measured independently at room temperature and fixed bias voltage using charge integration readout electronics. Both electrode sides of the detector have been exposed to a 241 Am source in order to obtain events with full contributions of either electrons or holes. The drift time has been measured to obtain the mobility for each charge carrier. The Hecht equation has been employed to evaluate the lifetime. The measured values for μτ (mobility-lifetime product) are in agreement with earlier published data.

Original language	English
Journal	Journal of Instrumentation
Volume	9
DOIs	https://doi.org/10.1088/1748-0221/9/12/C12032
Publication status	Published - 2014

Keywords

Solid state detectors
Charge transport and multiplication in solid media
Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc)

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10.1088/1748-0221/9/12/C12032

https://ddd.uab.cat/record/254327

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@article{6696061e868e48c6bf4f2d476424e7a6,

title = "Measurement of mobility and lifetime of electrons and holes in a Schottky CdTe diode",

abstract = "We report on the measurement of drift properties of electrons and holes in a CdTe diode grown by the travelling heating method (THM). Mobility and lifetime of both charge carriers has been measured independently at room temperature and fixed bias voltage using charge integration readout electronics. Both electrode sides of the detector have been exposed to a 241 Am source in order to obtain events with full contributions of either electrons or holes. The drift time has been measured to obtain the mobility for each charge carrier. The Hecht equation has been employed to evaluate the lifetime. The measured values for μτ (mobility-lifetime product) are in agreement with earlier published data.",

keywords = "Solid state detectors, Charge transport and multiplication in solid media, Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc)",

author = "Gerard Ari{\~n}o-Estrada and Mokhtar Chmeissani and \{De Lorenzo\}, Gianluca and Machiel Kolstein and Carles Puigdengoles and J. Garc{\'i}a and \{Cabruja i Casas\}, Enric",

year = "2014",

doi = "10.1088/1748-0221/9/12/C12032",

language = "English",

volume = "9",

journal = "Journal of Instrumentation",

issn = "1748-0221",

}

TY - JOUR

T1 - Measurement of mobility and lifetime of electrons and holes in a Schottky CdTe diode

AU - Ariño-Estrada, Gerard

AU - Chmeissani, Mokhtar

AU - De Lorenzo, Gianluca

AU - Kolstein, Machiel

AU - Puigdengoles, Carles

AU - García, J.

AU - Cabruja i Casas, Enric

PY - 2014

Y1 - 2014

N2 - We report on the measurement of drift properties of electrons and holes in a CdTe diode grown by the travelling heating method (THM). Mobility and lifetime of both charge carriers has been measured independently at room temperature and fixed bias voltage using charge integration readout electronics. Both electrode sides of the detector have been exposed to a 241 Am source in order to obtain events with full contributions of either electrons or holes. The drift time has been measured to obtain the mobility for each charge carrier. The Hecht equation has been employed to evaluate the lifetime. The measured values for μτ (mobility-lifetime product) are in agreement with earlier published data.

AB - We report on the measurement of drift properties of electrons and holes in a CdTe diode grown by the travelling heating method (THM). Mobility and lifetime of both charge carriers has been measured independently at room temperature and fixed bias voltage using charge integration readout electronics. Both electrode sides of the detector have been exposed to a 241 Am source in order to obtain events with full contributions of either electrons or holes. The drift time has been measured to obtain the mobility for each charge carrier. The Hecht equation has been employed to evaluate the lifetime. The measured values for μτ (mobility-lifetime product) are in agreement with earlier published data.

KW - Solid state detectors

KW - Charge transport and multiplication in solid media

KW - Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc)

UR - https://www.scopus.com/pages/publications/84950341425

U2 - 10.1088/1748-0221/9/12/C12032

DO - 10.1088/1748-0221/9/12/C12032

M3 - Article

C2 - 25729405

SN - 1748-0221

VL - 9

JO - Journal of Instrumentation

JF - Journal of Instrumentation

ER -

Measurement of mobility and lifetime of electrons and holes in a Schottky CdTe diode

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Keywords

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