TY - BOOK
T1 - Lumped model-based analysis of hBN RF switches
AU - Jordan-Garcia, Omar
AU - Ramirez-Garcia, Eloy
AU - Jimenez, David
AU - Pacheco-Sanchez, Anibal
N1 - Funding Information:
This work has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreements No GrapheneCore3 881603, from Ministerio de Ciencia, Innovación y Univer-sidades under grant agreement RTI2018-097876-B-C21(MCIU/AEI/FEDER, UE) and FJC2020-046213-I. This article has been partially funded by the European Union Regional Development Fund within the framework of the ERDF Operational Program of Catalonia 2014-2020 with the support of the Department de Recerca i Universitat, with a grant of 50% of total cost eligible. GraphCAT project reference: 001-P-001702.
Publisher Copyright:
© 2022 IEEE.
PY - 2022/7/4
Y1 - 2022/7/4
N2 - The intrinsic and extrinsic impedance parameters, the return loss, insertion loss and isolation of RF two-dimensional switches fabricated with hexagonal boron nitride (hBN) are described here by a lumped equivalent circuit model. Straight-forward analytical expressions are obtained. In contrast to conventional switches, the unique RF performance of the hBN switch, at ON-state i.e., a direct improvement with frequency of the insertion loss, is accurately described by considering a capacitor in the intrinsic part of the model. The latter is suggested to be related to storaged charge during the resistive switching mechanism.
AB - The intrinsic and extrinsic impedance parameters, the return loss, insertion loss and isolation of RF two-dimensional switches fabricated with hexagonal boron nitride (hBN) are described here by a lumped equivalent circuit model. Straight-forward analytical expressions are obtained. In contrast to conventional switches, the unique RF performance of the hBN switch, at ON-state i.e., a direct improvement with frequency of the insertion loss, is accurately described by considering a capacitor in the intrinsic part of the model. The latter is suggested to be related to storaged charge during the resistive switching mechanism.
KW - 2D
KW - hBN
KW - insertion loss
KW - isolation
KW - resistive switching
KW - RF switch
UR - http://www.scopus.com/inward/record.url?scp=85141361474&partnerID=8YFLogxK
U2 - 10.1109/LAEDC54796.2022.9907772
DO - 10.1109/LAEDC54796.2022.9907772
M3 - Proceeding
AN - SCOPUS:85141361474
T3 - 2022 IEEE Latin America Electron Devices Conference, LAEDC 2022
BT - Lumped model-based analysis of hBN RF switches
PB - Institute of Electrical and Electronics Engineers Inc.
ER -