Low temperature SiC growth by metalorganic LPCVD on MBE carbonized Si (001) substrates

E. Hurtós; J. Rodríguez-Viejo; J. Bassas; M. T. Clavaguera-Mora; K. Zekentes

doi:10.1016/S0921-5107(98)00471-1

Low temperature SiC growth by metalorganic LPCVD on MBE carbonized Si (001) substrates

E. Hurtós, J. Rodríguez-Viejo, J. Bassas, M. T. Clavaguera-Mora, K. Zekentes

Department of Physics

Research output: Contribution to journal › Article › Research › peer-review

8 Citations (Scopus)

Abstract

This work combines the advantages of two techniques, MBE and LPCVD, to grow epitaxial 3C-SiC films on 2 in. Si (001) wafers misoriented 2-4° towards [110]. For comparison, SiC was also deposited on bare Si (001) wafers. The LPCVD process was performed in a hot-wall quartz reactor at temperatures below 1200°C using an organometallic compound, tetramethylsilane, as a single precursor. The effect of the MBE buffer layer on the LPCVD SiC film quality has been investigated mainly by transmission electron microscopy (TEM) and X-ray diffraction (XRD) techniques. The best LPCVD SiC films were achieved at 1170°C. These preliminary results show that the presence of the MBE carbonization layer improves the LPCVD subsequent growth. The LPCVD SiC layer is highly sensitive to the quality of the buffer layer. © 1999 Elsevier Science S.A.

Original language	English
Pages (from-to)	549-552
Journal	Materials Science and Engineering B
Volume	61-62
DOIs	https://doi.org/10.1016/S0921-5107(98)00471-1
Publication status	Published - 30 Jul 1999

Keywords

Buffer layer
Crystal growth
CVD
SiC

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@article{8e4a8538417e46d19562ee05229ce972,

title = "Low temperature SiC growth by metalorganic LPCVD on MBE carbonized Si (001) substrates",

abstract = "This work combines the advantages of two techniques, MBE and LPCVD, to grow epitaxial 3C-SiC films on 2 in. Si (001) wafers misoriented 2-4° towards [110]. For comparison, SiC was also deposited on bare Si (001) wafers. The LPCVD process was performed in a hot-wall quartz reactor at temperatures below 1200°C using an organometallic compound, tetramethylsilane, as a single precursor. The effect of the MBE buffer layer on the LPCVD SiC film quality has been investigated mainly by transmission electron microscopy (TEM) and X-ray diffraction (XRD) techniques. The best LPCVD SiC films were achieved at 1170°C. These preliminary results show that the presence of the MBE carbonization layer improves the LPCVD subsequent growth. The LPCVD SiC layer is highly sensitive to the quality of the buffer layer. {\textcopyright} 1999 Elsevier Science S.A.",

keywords = "Buffer layer, Crystal growth, CVD, SiC",

author = "E. Hurt{\'o}s and J. Rodr{\'i}guez-Viejo and J. Bassas and Clavaguera-Mora, {M. T.} and K. Zekentes",

year = "1999",

month = jul,

day = "30",

doi = "10.1016/S0921-5107(98)00471-1",

language = "English",

volume = "61-62",

pages = "549--552",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Taylor and Francis Ltd.",

}

TY - JOUR

T1 - Low temperature SiC growth by metalorganic LPCVD on MBE carbonized Si (001) substrates

AU - Hurtós, E.

AU - Rodríguez-Viejo, J.

AU - Bassas, J.

AU - Clavaguera-Mora, M. T.

AU - Zekentes, K.

PY - 1999/7/30

Y1 - 1999/7/30

N2 - This work combines the advantages of two techniques, MBE and LPCVD, to grow epitaxial 3C-SiC films on 2 in. Si (001) wafers misoriented 2-4° towards [110]. For comparison, SiC was also deposited on bare Si (001) wafers. The LPCVD process was performed in a hot-wall quartz reactor at temperatures below 1200°C using an organometallic compound, tetramethylsilane, as a single precursor. The effect of the MBE buffer layer on the LPCVD SiC film quality has been investigated mainly by transmission electron microscopy (TEM) and X-ray diffraction (XRD) techniques. The best LPCVD SiC films were achieved at 1170°C. These preliminary results show that the presence of the MBE carbonization layer improves the LPCVD subsequent growth. The LPCVD SiC layer is highly sensitive to the quality of the buffer layer. © 1999 Elsevier Science S.A.

AB - This work combines the advantages of two techniques, MBE and LPCVD, to grow epitaxial 3C-SiC films on 2 in. Si (001) wafers misoriented 2-4° towards [110]. For comparison, SiC was also deposited on bare Si (001) wafers. The LPCVD process was performed in a hot-wall quartz reactor at temperatures below 1200°C using an organometallic compound, tetramethylsilane, as a single precursor. The effect of the MBE buffer layer on the LPCVD SiC film quality has been investigated mainly by transmission electron microscopy (TEM) and X-ray diffraction (XRD) techniques. The best LPCVD SiC films were achieved at 1170°C. These preliminary results show that the presence of the MBE carbonization layer improves the LPCVD subsequent growth. The LPCVD SiC layer is highly sensitive to the quality of the buffer layer. © 1999 Elsevier Science S.A.

KW - Buffer layer

KW - Crystal growth

KW - CVD

KW - SiC

U2 - 10.1016/S0921-5107(98)00471-1

DO - 10.1016/S0921-5107(98)00471-1

M3 - Article

VL - 61-62

SP - 549

EP - 552

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

ER -

Low temperature SiC growth by metalorganic LPCVD on MBE carbonized Si (001) substrates

Abstract

Keywords

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