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Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy
N. S. Savkina, A. A. Lebedev, D. V. Davydov, A. M. Strel'chuk, A. S. Tregubova, C. Raynaud, J. P. Chante, M. L. Locatelli, D. Planson, J. Milan, P. Godignon, F. J. Campos, N. Mestres, J. Pascual, G. Brezeanu, M. Badila
Research output: Contribution to journal › Article › Research › peer-review
42
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(Scopus)