Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

N. S. Savkina, A. A. Lebedev, D. V. Davydov, A. M. Strel'chuk, A. S. Tregubova, C. Raynaud, J. P. Chante, M. L. Locatelli, D. Planson, J. Milan, P. Godignon, F. J. Campos, N. Mestres, J. Pascual, G. Brezeanu, M. Badila

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